公开(公告)号：US20250017118A1

公开(公告)日：2025-01-09

申请号：US18412778

申请日：2024-01-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Se Chung Oh ,  JeongMok Kim ,  Tanyoung Kim ,  Heeju Shin ,  YoungJun Cho

IPC: H10N50/80 ,  H10B61/00 ,  H10N50/01 ,  H10N50/20

Abstract: A magnetic memory device includes a reference magnetic pattern and a free magnetic pattern stacked on a substrate, a tunnel barrier pattern between the reference magnetic pattern and the free magnetic pattern, a first non-magnetic pattern on the free magnetic pattern, the free magnetic pattern being between the tunnel barrier pattern and the first non-magnetic pattern, a second non-magnetic pattern on the first non-magnetic pattern, the first non-magnetic pattern being between the free magnetic pattern and the second non-magnetic pattern, a metal pattern between the first non-magnetic pattern and the second non-magnetic pattern, and a conductive layer on a side surface of the first non-magnetic pattern.