公开(公告)号：US20190198118A1

公开(公告)日：2019-06-27

申请号：US16164845

申请日：2018-10-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： WON-BO SHIM ,  SANG-WAN NAM ,  JI-HO CHO

IPC: G11C16/16 ,  G11C16/26 ,  G11C16/30 ,  G11C16/04 ,  G11C7/10

CPC classification number: G11C16/16 ,  G11C7/1039 ,  G11C8/14 ,  G11C16/0483 ,  G11C16/26 ,  G11C16/30 ,  G11C2216/16

Abstract: A method of operating a memory device includes performing a data read operation on at least one victim sub-block within a memory block containing a plurality of sub-blocks therein, in response to an erase command directed to a selected sub-block within the plurality of sub-blocks. Next, a soft program operation is performed on the at least one victim sub-block. This soft programming operation is then followed by an operation to erase the selected sub-block within the plurality of sub-blocks. This operation to erase the selected sub-block may include providing an erase voltage to a bulk region of a substrate on which the memory block extends, and the at least one victim sub-block may be disposed between the selected sub-block and the substrate.