公开(公告)号：US20230040281A1

公开(公告)日：2023-02-09

申请号：US17590717

申请日：2022-02-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Cheonil PARK ,  WONKEUN KIM ,  MYOUNGCHUL EUM

IPC: H01L21/306 ,  B32B43/00 ,  B32B38/16 ,  B32B7/12 ,  H01L21/683 ,  C09J7/40

Abstract: Disclosed are methods of fabricating semiconductor devices and methods of separating substrates. The semiconductor device fabricating method comprises providing a release layer between a carrier substrate and a first surface of a device substrate to attach the device substrate to the carrier substrate, irradiating the carrier substrate with an ultraviolet ray to separate the carrier substrate from the release layer and to expose one surface of the release layer, and performing a cleaning process on the one surface of the release layer to expose the first surface of the device substrate. The release layer includes an aromatic polymerization unit and a siloxane polymerization unit.

公开(公告)号：US20200058615A1

公开(公告)日：2020-02-20

申请号：US16533450

申请日：2019-08-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： HWAIL JIN ,  YONGWON CHOI ,  MYUNG-SUNG KANG ,  YEONGSEOK KIM ,  WONKEUN KIM

IPC: H01L23/00 ,  H01L21/78

Abstract: A flip chip bonding method includes obtaining a die including a first substrate and an adhesive layer on the first substrate; bonding the die to a second substrate different from the first substrate; and curing the adhesive layer. The curing the adhesive layer includes heating the second substrate to melt the adhesive layer, and providing the adhesive layer and the second substrate with air having pressure greater than atmospheric pressure.