METHOD OF FABRICATING SEMICONDUCTOR DEVICE AND METHOD OF SEPARATING SUBSTRATE

    公开(公告)号:US20230040281A1

    公开(公告)日:2023-02-09

    申请号:US17590717

    申请日:2022-02-01

    Abstract: Disclosed are methods of fabricating semiconductor devices and methods of separating substrates. The semiconductor device fabricating method comprises providing a release layer between a carrier substrate and a first surface of a device substrate to attach the device substrate to the carrier substrate, irradiating the carrier substrate with an ultraviolet ray to separate the carrier substrate from the release layer and to expose one surface of the release layer, and performing a cleaning process on the one surface of the release layer to expose the first surface of the device substrate. The release layer includes an aromatic polymerization unit and a siloxane polymerization unit.

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