公开(公告)号：US20240042385A1

公开(公告)日：2024-02-08

申请号：US18230880

申请日：2023-08-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wonsu LEE ,  Hyunseok KIM ,  Jungdae PARK ,  Kimoon LEE ,  Jong-San CHANG

IPC: B01D53/88 ,  B01D53/86 ,  H01L21/67

CPC classification number: B01D53/885 ,  B01D53/869 ,  H01L21/67069 ,  B01D2258/0216 ,  B01D2255/9032

Abstract: A gas treatment system includes a first scrubber configured to treat a gas exhausted from a process chamber, a catalytic reactor connected to the first scrubber and configured to treat a gas passing through the first scrubber, and a second scrubber connected to the catalytic reactor and configured to treat a gas passing through the catalytic reactor, where the catalytic reactor includes a fluidized bed reactor (FBR).

公开(公告)号：US20240096649A1

公开(公告)日：2024-03-21

申请号：US18368422

申请日：2023-09-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Wonsu LEE ,  Hyunseok KIM ,  Jungdae PARK ,  Kimoon LEE ,  Jong-San CHANG

IPC: H01L21/67 ,  H05H1/24 ,  H05H1/26

CPC classification number: H01L21/67017 ,  H05H1/2406 ,  H05H1/26 ,  H05H2245/17

Abstract: A gas treatment method, including: treating an exhaust gas discharged from a semiconductor process chamber using a gas treatment system; and discharging the treated exhaust gas, wherein the treating of the exhaust gas includes: operating a first thermal oxidizer to treat the exhaust gas discharged from the semiconductor process chamber, the first thermal oxidizer being connected to the semiconductor process chamber and allowing the treated exhaust gas to pass through a plasma processing apparatus connected to the first thermal oxidizer; stopping the operation of the first thermal oxidizer to perform maintenance on the first thermal oxidizer; and wherein the stopping the operation of the first thermal oxidizer comprises: performing maintenance on the first thermal oxidizer; and operating the plasma processing apparatus to treat the exhaust gas discharged from the semiconductor process chamber