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1.发明公开公开(公告)号：US20240042385A1
公开(公告)日：2024-02-08
申请号：US18230880
申请日：2023-08-07
Applicant: Samsung Electronics Co., Ltd.
Inventor： Wonsu LEE , Hyunseok KIM , Jungdae PARK , Kimoon LEE , Jong-San CHANG
CPC classification number: B01D53/885 , B01D53/869 , H01L21/67069 , B01D2258/0216 , B01D2255/9032
Abstract: A gas treatment system includes a first scrubber configured to treat a gas exhausted from a process chamber, a catalytic reactor connected to the first scrubber and configured to treat a gas passing through the first scrubber, and a second scrubber connected to the catalytic reactor and configured to treat a gas passing through the catalytic reactor, where the catalytic reactor includes a fluidized bed reactor (FBR).
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公开(公告)号：US20230332747A1
公开(公告)日：2023-10-19
申请号：US17721881
申请日：2022-04-15
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Beomsoo HWANG , Jongkyu KIM , Hyunsik KIM , Kyeongsup BYEON , Byungjun AN , Byeongchan JEONG , Kimoon LEE , Hyungho CHOI
CPC classification number: F17C13/04 , F17C13/02 , F17C2205/0382 , F17C2205/037 , F17C2205/0329 , F17C2250/0478 , F17C2260/036
Abstract: A gas supply apparatus includes: a mounting portion installed on a cabinet; a gas supply portion installed on the mounting portion so as to be raisable and lowerable; and a gas container fixing portion fixing a gas container to the gas supply portion, wherein the gas supply portion includes a compressed gas association (CGA) fastening module that is installed on the mounting portion and is detachable from the gas container, and the CGA fastening module includes: a case; an end cap housing rotatably installed on the case; a CGA connector housing installed on the case so as to be disposed adjacent to the end cap housing; a gasket detection sensor installed on a sensor installation mount of the case and disposed under the CGA connector housing; and a power transmission portion spaced apart from the end cap housing and connected to the end cap housing and the CGA connector housing.
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公开(公告)号：US20230274952A1
公开(公告)日：2023-08-31
申请号：US18049954
申请日：2022-10-26
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： WONSU LEE , Kimoon LEE , Seungjum LEE , Jong san CHANG , Joungwoo HAN
IPC: H01L21/67 , H05H1/24 , F23C13/00 , F23J15/04 , F23J15/06 , F23J15/08 , B01D53/14 , B01D53/18 , B01D53/86 , B01D53/32 , B01D53/75 , B01D45/16
CPC classification number: H01L21/67017 , H05H1/2406 , F23C13/00 , F23J15/04 , F23J15/06 , F23J15/08 , B01D53/1493 , B01D53/1406 , B01D53/1431 , B01D53/18 , B01D53/869 , B01D53/32 , B01D53/75 , B01D45/16 , H05H2245/17 , H05H2242/10 , F23J2219/40 , F23G2204/201 , F23G2202/60 , B01D2252/103 , B01D2259/818
Abstract: A gas treatment system includes a first scrubber, a regenerative catalytic oxidizer (RCO) that treats gas that passes through the first scrubber, a second scrubber that treats the gas that passed through the regenerative catalytic oxidizer, and a dielectric barrier discharge (DBD) plasma reactor that treats the gas that passed through the second scrubber. The regenerative catalytic oxidizer includes a two-bed regenerative catalytic reactor.
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公开(公告)号：US20160163410A1
公开(公告)日：2016-06-09
申请号：US14870265
申请日：2015-09-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Doh Won JUNG , Hee Jung PARK , Yoon Chul SON , Yun Sung WOO , Jongmin LEE , Yong Hee CHO , Kyoung-Seok MOON , Jae-Young CHOI , Kimoon LEE
IPC: H01B1/02
CPC classification number: H01L21/02186 , B32B5/16 , B32B15/04 , B32B2307/202 , B32B2307/704 , H01B1/02 , H01L21/02172 , H01L21/02197 , H01L27/016
Abstract: An electrically conductive thin film including a plurality of nanosheets including a doped titanium oxide represented by Chemical Formula 1 and having a layered crystal structure: (AαTi1−α)O2+δ Chemical Formula 1 wherein, in Chemical Formula 1, δ is greater than 0, A is at least one dopant metal selected from Nb, Ta, V, W, Cr, and Mo, and α is greater than 0 and less than 1. Also, an electronic device including the electrically conductive thin film.
Abstract translation: 一种导电薄膜，包括多个纳米片，包括由化学式1表示的具有层状晶体结构的掺杂氧化钛的纳米片：（AαTi1-α）O 2 +δ化学式1其中，在化学式1中，δ大于0 A是选自Nb，Ta，V，W，Cr和Mo中的至少一种掺杂剂金属，α大于0且小于1.另外，包括导电薄膜的电子器件。
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公开(公告)号：US20150380122A1
公开(公告)日：2015-12-31
申请号：US14740583
申请日：2015-06-16
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sungwoo HWANG , Kimoon LEE , Doh Won JUNG , Sang Il KIM , Kyoung-Seok MOON , Woojin LEE
CPC classification number: H01B1/02 , C01B19/002 , C01B19/02 , C01P2002/72 , C01P2004/24 , C01P2006/40 , C01P2006/60 , C04B35/547 , C04B2235/404 , C04B2235/405 , C04B2235/408 , C04B2235/42 , C04B2235/428 , C04B2235/6562 , C04B2235/6565 , C04B2235/6567 , C04B2235/662 , C04B2235/76
Abstract: An electrically conductive thin film including a compound represented by Chemical Formula 1 and having a layered crystal structure: AxMyChz Chemical Formula 1 wherein A is V, Nb, or Ta, M is Ni, Co, Fe, Pd, Pt, Ir, Rh, Si, or Ge, Ch is S, Se, or Te, x is a number from 1 to 3, y is a number from 1 to 3, and z is a number from 2 to 14.
Abstract translation: 一种导电薄膜，包括由化学式1表示的具有层状结晶结构的化合物：AxMyChz化学式1其中A为V，Nb或Ta，M为Ni，Co，Fe，Pd，Pt，Ir，Rh， Si或Ge，Ch是S，Se或Te，x是1至3的数，y是1至3的数，z是2至14的数。
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Patent Agency Ranking
公开(公告)号：US20150340123A1
公开(公告)日：2015-11-26
申请号：US14539408
申请日：2014-11-12
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Doh Won JUNG , Hee Jung PARK , Kimoon LEE , Yoon Chul SON , Woojin LEE , Youngjin CHO
CPC classification number: H01B1/02 , C01B35/04 , C01P2006/40 , C01P2006/60 , G06F3/041 , G06F2203/04103 , H01B1/06 , H01L31/022466 , Y10T428/256
Abstract: A transparent conductor including a Group 5 transition metal and boron, wherein the compound has a layered structure.
Abstract translation: 包括第5族过渡金属和硼的透明导体，其中该化合物具有层状结构。
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7.发明申请公开(公告)号：US20150225239A1
公开(公告)日：2015-08-13
申请号：US14610783
申请日：2015-01-30
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kimoon LEE , Byungki RYU , Yoon Chul SON , Hyeon Cheol PARK , Sang Mock LEE
CPC classification number: C01B25/14 , C01B19/002 , C01B19/007 , C01G27/006 , C01G28/002 , C01G29/006 , C01G30/002 , C01P2002/52 , C01P2002/72 , C01P2002/77 , C01P2006/40 , H01B1/02 , H01B1/06 , H01B1/10
Abstract: A hafnium telluride compound includes a layered crystal structure and represented by the following Chemical Formula 1. Hf3Te2-xAx [Chemical Formula 1] Herein, A is at least one selected from phosphorus (P), Arsenic (As), antimony (Sb), bismuth (Bi), sulfur (S) and selenium (Se), and 0
Abstract translation: 铪碲化合物包括层状晶体结构并由以下化学式1表示。Hf 3 Te 2-x A x [化学式1]这里，A是选自磷（P），砷（As），锑（Sb）， 铋（Bi），硫（S）和硒（Se）和0
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公开(公告)号：US20240096649A1
公开(公告)日：2024-03-21
申请号：US18368422
申请日：2023-09-14
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Wonsu LEE , Hyunseok KIM , Jungdae PARK , Kimoon LEE , Jong-San CHANG
CPC classification number: H01L21/67017 , H05H1/2406 , H05H1/26 , H05H2245/17
Abstract: A gas treatment method, including: treating an exhaust gas discharged from a semiconductor process chamber using a gas treatment system; and discharging the treated exhaust gas, wherein the treating of the exhaust gas includes: operating a first thermal oxidizer to treat the exhaust gas discharged from the semiconductor process chamber, the first thermal oxidizer being connected to the semiconductor process chamber and allowing the treated exhaust gas to pass through a plasma processing apparatus connected to the first thermal oxidizer; stopping the operation of the first thermal oxidizer to perform maintenance on the first thermal oxidizer; and wherein the stopping the operation of the first thermal oxidizer comprises: performing maintenance on the first thermal oxidizer; and operating the plasma processing apparatus to treat the exhaust gas discharged from the semiconductor process chamber
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公开(公告)号：US20160141067A1
公开(公告)日：2016-05-19
申请号：US14940223
申请日：2015-11-13
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kimoon LEE , Sang Il KIM , Se Yun KIM , Sung Woo HWANG , Woojin LEE , Hee Jung PARK , Yoon Chul SON , Hyosug LEE , Doh Won JUNG , Youngjin CHO , Jae-Young CHOI
IPC: H01B1/06
CPC classification number: H01B1/02 , C01B19/002 , C01B19/007 , C01P2002/20 , C01P2002/30 , C01P2002/90 , C30B7/00 , C30B29/46 , C30B29/60 , C30B29/605 , C30B29/607 , H01B1/06 , H01L21/02417 , H01L21/02573 , H01L21/02609
Abstract: An electrically conductive thin film including: a material including a compound represented by Chemical Formula 1 and having a layered crystal structure, MemAa Chemical Formula 1 wherein Me is Al, Ga, In, Si, Ge, Sn, A is S, Se, Te, or a combination thereof, and m and a each are independently a number selected so that the compound of Chemical Formula 1 is neutral; and a dopant disposed in the compound of Chemical Formula 1, wherein the dopant is a metal dopant that is different from Me and has an oxidation state which is greater than an oxidation state of Me, a non-metal dopant having a greater number of valence electrons than a number of valence electrons of A in Chemical Formula 1, or a combination thereof, and wherein the compound of Chemical Formula 1 includes a chemical bond which includes a valence electron of an s orbital of Me.
Abstract translation: 一种导电薄膜，包括：包含由化学式1表示并具有层状晶体结构的化合物的材料，其中Me为Al，Ga，In，Si，Ge，Sn，A的MemAa化学式1为S，Se，Te ，或它们的组合，m和a各自独立地选择为使化学式1的化合物为中性的数字; 以及配置在化学式1的化合物中的掺杂剂，其中所述掺杂剂是与Me不同的金属掺杂剂，并且具有大于Me的氧化态的氧化态，具有更大数量化合价的非金属掺杂剂 电子与化学式1中A的多价价电子或其组合，其中化学式1的化合物包括包含Me轨道的价电子的化学键。
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公开(公告)号：US20150344305A1
公开(公告)日：2015-12-03
申请号：US14721107
申请日：2015-05-26
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sung Woo HWANG , Kyoung-Seok MOON , Youngjin CHO , Yoon Chul SON , Kimoon LEE , Doh Won JUNG
CPC classification number: C01B19/002 , B22F5/006 , B22F2001/0033 , C01P2002/20 , C01P2002/70 , C01P2002/76 , C01P2002/90 , C01P2006/40 , C01P2006/60 , C03C17/22 , C03C2217/289 , C22C28/00 , C22C30/00 , C30B29/46 , H01B1/06 , H01L21/02491 , H01L21/02502 , H01L21/02505 , H01L31/022466
Abstract: A conductive material including a first element selected from a transition metal, a platinum-group element, a rare earth element, and a combination thereof, a second element having an atomic radius which is 10 percent less than to 10 percent greater than an atomic radius of the first element, and a chalcogen element, wherein the conductive material has a layered crystal structure.
Abstract translation: 包括从过渡金属，铂族元素，稀土元素及其组合中选择的第一元素的导电材料，其原子半径比原子半径大10％至10％的第二元素 的第一元素和硫属元素，其中导电材料具有层状晶体结构。
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