公开(公告)号：US20230112849A1

公开(公告)日：2023-04-13

申请号：US17881009

申请日：2022-08-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dobin KIM ,  Wontaeck JUNG ,  Jaehyuk YANG ,  Jinwoo YANG

IPC: G11C16/34 ,  G11C11/56 ,  G11C16/10 ,  H01L25/065 ,  H01L25/18 ,  H01L23/00

Abstract: A memory device and a method for programming the same may include, applying program loops to a plurality of memory cells of the memory device to adjust threshold voltages of the plurality of memory cells to desired target states, each of the program loops including a program section and a verification section, programming the memory cells of a first page, storing a number of first program loops used to complete the programming of the memory cells of the first page to a first target state, programming the memory cells of a second page to the first target state, the second page adjacent to the first page, and performing a verification operation on the second page.

公开(公告)号：US20220013184A1

公开(公告)日：2022-01-13

申请号：US17336910

申请日：2021-06-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Garam KIM ,  Hyunggon KIM ,  Jisang LEE ,  Joonsuc JANG ,  Wontaeck JUNG

IPC: G11C16/34 ,  G11C16/12 ,  G11C16/26 ,  G11C16/30 ,  G11C16/24

Abstract: A memory device includes a memory cell array including a plurality of memory cells; a voltage generator configured to generate voltages used for a program operation and a verify operation for the memory cells; and control logic configured to perform a plurality of program loops while writing data to the memory cell array, such that first to N-th (e.g., N>=1) program loops including a program operation and a verify operation are performed and at least two program loops in which the verify operation is skipped are performed when a pass/fail determination of the program operation in the N-th program loop indicates a pass.