公开(公告)号：US20170170075A1

公开(公告)日：2017-06-15

申请号：US15443498

申请日：2017-02-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chan-Hee JEON ,  Eun-Kyoung KWON ,  II-Ryong KIM ,  Han-Gu KIM ,  Woo-Jin SEO ,  Ki-Tae LEE

IPC: H01L21/8238 ,  H01L29/08 ,  H01L29/16 ,  H01L29/161 ,  H01L29/165 ,  H01L27/11 ,  H01L23/535 ,  H01L21/02 ,  H01L21/768 ,  H01L21/266 ,  H01L27/02 ,  H01L27/092 ,  H01L29/78

CPC classification number: H01L21/823814 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/266 ,  H01L21/76805 ,  H01L21/76895 ,  H01L21/823821 ,  H01L21/823871 ,  H01L23/535 ,  H01L27/0288 ,  H01L27/0886 ,  H01L27/0924 ,  H01L27/1104 ,  H01L27/1116 ,  H01L29/0847 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66795 ,  H01L29/7848

Abstract: In one embodiment, the semiconductor device includes at least one active fin protruding from a substrate, a first gate electrode crossing the active fin, and a first impurity region formed on the active fin at a first side of the first gate electrode. At least a portion of the first impurity region is formed in a first epitaxial layer portion on the active fin. A second impurity region is formed on the active fin at a second side of the first gate electrode. The second impurity region has at least a portion not formed in an epitaxial layer.