公开(公告)号：US20190173278A1

公开(公告)日：2019-06-06

申请号：US16038744

申请日：2018-07-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung-Pil JANG ,  Chang-Su KIM ,  Han-Gu KIM ,  Moon-Seok YANG ,  Kyoung-Ki JEON

IPC: H02H9/04 ,  H01L27/02

Abstract: An electrostatic discharge (ESD) protection circuit is provided. The ESD protection circuit includes a transient-state detection circuit configured to generate a dynamic triggering signal based on a voltage change rate of a voltage on a first power rail; a voltage detection circuit configured to generate a static triggering signal based on the voltage on the first power rail; a trigger circuit configured to generate a discharge control signal based on the dynamic triggering signal and the static triggering signal; and a main discharge circuit configured to discharge an electric charge from the first power rail to a second power rail based on the discharge control signal.

公开(公告)号：US20170170075A1

公开(公告)日：2017-06-15

申请号：US15443498

申请日：2017-02-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chan-Hee JEON ,  Eun-Kyoung KWON ,  II-Ryong KIM ,  Han-Gu KIM ,  Woo-Jin SEO ,  Ki-Tae LEE

IPC: H01L21/8238 ,  H01L29/08 ,  H01L29/16 ,  H01L29/161 ,  H01L29/165 ,  H01L27/11 ,  H01L23/535 ,  H01L21/02 ,  H01L21/768 ,  H01L21/266 ,  H01L27/02 ,  H01L27/092 ,  H01L29/78

CPC classification number: H01L21/823814 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/266 ,  H01L21/76805 ,  H01L21/76895 ,  H01L21/823821 ,  H01L21/823871 ,  H01L23/535 ,  H01L27/0288 ,  H01L27/0886 ,  H01L27/0924 ,  H01L27/1104 ,  H01L27/1116 ,  H01L29/0847 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66795 ,  H01L29/7848

Abstract: In one embodiment, the semiconductor device includes at least one active fin protruding from a substrate, a first gate electrode crossing the active fin, and a first impurity region formed on the active fin at a first side of the first gate electrode. At least a portion of the first impurity region is formed in a first epitaxial layer portion on the active fin. A second impurity region is formed on the active fin at a second side of the first gate electrode. The second impurity region has at least a portion not formed in an epitaxial layer.

公开(公告)号：US20170062406A1

公开(公告)日：2017-03-02

申请号：US15234532

申请日：2016-08-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae-Hyok KO ,  Min-Chang KO ,  Han-Gu KIM ,  Jong-Kyu SONG ,  Jin HEO

IPC: H01L27/02 ,  H01L29/74

CPC classification number: H01L27/0248 ,  H01L27/0262 ,  H01L29/0649 ,  H01L29/0692 ,  H01L29/66681 ,  H01L29/7412 ,  H01L29/742 ,  H01L29/7436 ,  H01L29/7817 ,  H01L29/87

Abstract: An electrostatic discharge (ESD) protection device includes an N-type laterally diffused metal oxide semiconductor (LDMOS) transistor including a source electrode, a gate electrode, and a well bias electrode that are connected to a first pad receiving a first voltage, and a drain electrode connected to a middle node. The ESD protection device further includes a silicon controlled rectifier (SCR) connected between the middle node and a second pad receiving a second voltage higher than the first voltage.

Abstract translation: 静电放电（ESD）保护装置包括N型横向扩散金属氧化物半导体（LDMOS）晶体管，其包括源电极，栅电极和阱偏置电极，其连接到接收第一电压的第一焊盘，以及 漏电极连接到中间节点。 ESD保护装置还包括连接在中间节点和接收高于第一电压的第二电压的第二焊盘之间的可控硅整流器（SCR）。

公开(公告)号：US20140316760A1

公开(公告)日：2014-10-23

申请号：US14254337

申请日：2014-04-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Wook LEE ,  Han-Gu KIM ,  Young-Keun LEE ,  Jong-Sung JEON

IPC: G06F17/50

CPC classification number: G06F17/5036

Abstract: A three-dimensional optoelectrical simulation includes generating a process simulation result including a doping profile of a silicon substrate of image sensor, a structure simulation result with respect to a back end of line structure, and a merged result generated by merging a process simulation result and a structure simulation result, selectively extending the merged result to an extended result by using a process simulation result or a structure simulation result, generating a segmented result for each pixel based on a merged result or an extended result, an optical crosstalk simulation result of image sensor based on a structure simulation result and an optical mesh, and a final simulation result including an electrical crosstalk simulation result of the image sensor based on a segmented result for each pixel and an optical crosstalk simulation result.

Abstract translation: 三维光电仿真包括生成包括图像传感器的硅衬底的掺杂分布，相对于线结构的后端的结构模拟结果的过程模拟结果，以及通过将过程模拟结果和 结构模拟结果，通过使用过程模拟结果或结构模拟结果选择性地将合并结果扩展到扩展结果，基于合并结果或扩展结果为每个像素生成分段结果，图像的光学串扰模拟结果 基于结构仿真结果和光学网格的传感器，以及包括基于每个像素的分割结果的图像传感器的电串扰仿真结果和光学串扰仿真结果的最终仿真结果。