中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

7 records (took 0.012 seconds)

    SEMICONDUCTOR PACKAGE
    1.
    发明申请
    SEMICONDUCTOR PACKAGE 有权

    公开(公告)号：US20220037279A1

    公开(公告)日：2022-02-03

    申请号：US17193435

    申请日：2021-03-05

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： NAMHOON KIM ,  SEUNGHOON YEON ,  YONGHOE CHO

    IPC: H01L23/00

    Abstract: Disclosed is a semiconductor package comprising a redistribution substrate, a semiconductor chip on the redistribution substrate and including a chip pad electrically connected to the redistribution substrate, and a conductive terminal on the redistribution substrate. The redistribution substrate includes a first dielectric layer, a first redistribution pattern, a second dielectric layer, a second redistribution pattern, and a first insulative pattern. The first redistribution pattern electrically connects the chip pad and the second redistribution pattern. The first insulative pattern has a first surface in contact with the first redistribution pattern and a second surface in contact with the second redistribution pattern. The second surface is opposite to the first surface. A width at the first surface of the first insulative pattern is the same as or greater than a width at the second surface of the first insulative pattern.

    SEMICONDUCTOR PACKAGE
    2.
    发明公开
    SEMICONDUCTOR PACKAGE 审中-公开

    公开(公告)号：US20230148191A1

    公开(公告)日：2023-05-11

    申请号：US18094794

    申请日：2023-01-09

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： NAMHOON KIM ,  SEUNGHOON YEON ,  YONGHOE CHO

    IPC: H01L23/00

    CPC classification number: H01L24/20 ,  H01L24/13 ,  H01L2224/214 ,  H01L2224/2101

    Abstract: Disclosed is a semiconductor package comprising a redistribution substrate, a semiconductor chip on the redistribution substrate and including a chip pad electrically connected to the redistribution substrate, and a conductive terminal on the redistribution substrate. The redistribution substrate includes a first dielectric layer, a first redistribution pattern, a second dielectric layer, a second redistribution pattern, and a first insulative pattern. The first redistribution pattern electrically connects the chip pad and the second redistribution pattern. The first insulative pattern has a first surface in contact with the first redistribution pattern and a second surface in contact with the second redistribution pattern. The second surface is opposite to the first surface. A width at the first surface of the first insulative pattern is the same as or greater than a width at the second surface of the first insulative pattern.

    SEMICONDUCTOR PACKAGE
    3.
    发明申请
    SEMICONDUCTOR PACKAGE 有权

    公开(公告)号：US20230111854A1

    公开(公告)日：2023-04-13

    申请号：US17851245

    申请日：2022-06-28

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： JU-IL CHOI ,  UN-BYOUNG KANG ,  MINSEUNG YOON ,  YONGHOE CHO ,  JEONGGI JIN ,  YUN SEOK CHOI

    IPC: H01L25/10 ,  H01L23/538 ,  H01L23/498 ,  H01L23/31 ,  H01L23/00 ,  H01L23/48

    Abstract: Provided is a semiconductor package, including a first redistribution substrate, a first semiconductor chip on the first redistribution substrate, first bumps between the first redistribution substrate and the first semiconductor chip, a conductive structure on the first redistribution substrate and spaced apart from the first semiconductor chip, a second redistribution substrate on the first semiconductor chip, second bumps between the first semiconductor chip and the second redistribution substrate, a second semiconductor chip on the second redistribution substrate, a first mold layer between the first redistribution substrate and the second redistribution substrate, and on the first semiconductor chip, and a second mold layer on the second redistribution substrate and the second semiconductor chip, and spaced apart from the first mold layer.

    METHODS OF FORMING REDISTRIBUTION LINES AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES USING THE SAME
    5.
    发明申请
    METHODS OF FORMING REDISTRIBUTION LINES AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES USING THE SAME 审中-公开

    公开(公告)号：US20190172865A1

    公开(公告)日：2019-06-06

    申请号：US15996480

    申请日：2018-06-03

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： YONGHOE CHO ,  JONGBO SHIM ,  SEUNGHOON YEON ,  WON IL LEE

    IPC: H01L27/146

    Abstract: A method of manufacturing a semiconducor device includes providing a semiconductor substrate having a top surface, on which has been formed a color filter and a micro-lens, and a bottom surface opposite to the top surface, forming a redistribution line on the bottom surface of the semiconductor substrate, and forming on the bottom surface of the semiconductor substrate a passivation layer covering the redistribution line. After the redistribution line and passivation layer are formed, an oxide layer between the redistribution line and the passivation is formed at a temperature that avoids thermal damage to the color filter and the micro-lens.

    SEMICONDUCTOR PACKAGE
    7.
    发明申请
    SEMICONDUCTOR PACKAGE 有权

    公开(公告)号：US20220122955A1

    公开(公告)日：2022-04-21

    申请号：US17357378

    申请日：2021-06-24

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： YONGHOE CHO ,  SUNKYOUNG SEO ,  CHAJEA JO

    IPC: H01L25/16 ,  H01L23/498 ,  H01L23/538 ,  H01L23/14 ,  H01L23/00

    Abstract: A semiconductor package includes a package substrate, a connection substrate on the package substrate, a first image sensor chip on the connection substrate, a second image sensor chip on the connection substrate, the second image sensor chip being horizontally spaced apart from the first image sensor chip, and a memory chip disposed on the package substrate and electrically connected to the first image sensor chip through the connection substrate. A distance between the first image sensor chip and the second image sensor chip is less than a thickness of the first image sensor chip.

Patent Agency Ranking