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公开(公告)号:US20220037279A1
公开(公告)日:2022-02-03
申请号:US17193435
申请日:2021-03-05
Applicant: Samsung Electronics Co., Ltd.
Inventor: NAMHOON KIM , SEUNGHOON YEON , YONGHOE CHO
IPC: H01L23/00
Abstract: Disclosed is a semiconductor package comprising a redistribution substrate, a semiconductor chip on the redistribution substrate and including a chip pad electrically connected to the redistribution substrate, and a conductive terminal on the redistribution substrate. The redistribution substrate includes a first dielectric layer, a first redistribution pattern, a second dielectric layer, a second redistribution pattern, and a first insulative pattern. The first redistribution pattern electrically connects the chip pad and the second redistribution pattern. The first insulative pattern has a first surface in contact with the first redistribution pattern and a second surface in contact with the second redistribution pattern. The second surface is opposite to the first surface. A width at the first surface of the first insulative pattern is the same as or greater than a width at the second surface of the first insulative pattern.
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公开(公告)号:US20230148191A1
公开(公告)日:2023-05-11
申请号:US18094794
申请日:2023-01-09
Applicant: Samsung Electronics Co., Ltd.
Inventor: NAMHOON KIM , SEUNGHOON YEON , YONGHOE CHO
IPC: H01L23/00
CPC classification number: H01L24/20 , H01L24/13 , H01L2224/214 , H01L2224/2101
Abstract: Disclosed is a semiconductor package comprising a redistribution substrate, a semiconductor chip on the redistribution substrate and including a chip pad electrically connected to the redistribution substrate, and a conductive terminal on the redistribution substrate. The redistribution substrate includes a first dielectric layer, a first redistribution pattern, a second dielectric layer, a second redistribution pattern, and a first insulative pattern. The first redistribution pattern electrically connects the chip pad and the second redistribution pattern. The first insulative pattern has a first surface in contact with the first redistribution pattern and a second surface in contact with the second redistribution pattern. The second surface is opposite to the first surface. A width at the first surface of the first insulative pattern is the same as or greater than a width at the second surface of the first insulative pattern.
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公开(公告)号:US20230111854A1
公开(公告)日:2023-04-13
申请号:US17851245
申请日:2022-06-28
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: JU-IL CHOI , UN-BYOUNG KANG , MINSEUNG YOON , YONGHOE CHO , JEONGGI JIN , YUN SEOK CHOI
IPC: H01L25/10 , H01L23/538 , H01L23/498 , H01L23/31 , H01L23/00 , H01L23/48
Abstract: Provided is a semiconductor package, including a first redistribution substrate, a first semiconductor chip on the first redistribution substrate, first bumps between the first redistribution substrate and the first semiconductor chip, a conductive structure on the first redistribution substrate and spaced apart from the first semiconductor chip, a second redistribution substrate on the first semiconductor chip, second bumps between the first semiconductor chip and the second redistribution substrate, a second semiconductor chip on the second redistribution substrate, a first mold layer between the first redistribution substrate and the second redistribution substrate, and on the first semiconductor chip, and a second mold layer on the second redistribution substrate and the second semiconductor chip, and spaced apart from the first mold layer.
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4.
公开(公告)号:US20210028217A1
公开(公告)日:2021-01-28
申请号:US16802683
申请日:2020-02-27
Applicant: Samsung Electronics Co., Ltd.
Inventor: YONGHOE CHO , CHUNGSUN LEE , YOONHA JUNG , CHAJEA JO
IPC: H01L27/146 , H01L23/00 , H01L23/48 , H01L21/683
Abstract: Disclosed are a semiconductor package and a method of fabricating the same. The semiconductor package may include a semiconductor chip structure, a transparent substrate disposed on the semiconductor chip structure, a dam placed on an edge of the semiconductor chip structure and between the semiconductor chip structure and the transparent substrate, and an adhesive layer interposed between the dam and the semiconductor chip structure. The semiconductor chip structure may include an image sensor chip and a logic chip, which are in contact with each other, and the image sensor chip may be closer to the transparent substrate than the logic chip.
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5.
公开(公告)号:US20190172865A1
公开(公告)日:2019-06-06
申请号:US15996480
申请日:2018-06-03
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: YONGHOE CHO , JONGBO SHIM , SEUNGHOON YEON , WON IL LEE
IPC: H01L27/146
Abstract: A method of manufacturing a semiconducor device includes providing a semiconductor substrate having a top surface, on which has been formed a color filter and a micro-lens, and a bottom surface opposite to the top surface, forming a redistribution line on the bottom surface of the semiconductor substrate, and forming on the bottom surface of the semiconductor substrate a passivation layer covering the redistribution line. After the redistribution line and passivation layer are formed, an oxide layer between the redistribution line and the passivation is formed at a temperature that avoids thermal damage to the color filter and the micro-lens.
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6.
公开(公告)号:US20220254827A1
公开(公告)日:2022-08-11
申请号:US17731022
申请日:2022-04-27
Applicant: Samsung Electronics Co., Ltd.
Inventor: YONGHOE CHO , CHUNGSUN LEE , YOONHA JUNG , CHAJEA JO
IPC: H01L27/146 , H01L23/00 , H01L23/48 , H01L21/683
Abstract: Disclosed are a semiconductor package and a method of fabricating the same. The semiconductor package may include a semiconductor chip structure, a transparent substrate disposed on the semiconductor chip structure, a dam placed on an edge of the semiconductor chip structure and between the semiconductor chip structure and the transparent substrate, and an adhesive layer interposed between the dam and the semiconductor chip structure. The semiconductor chip structure may include an image sensor chip and a logic chip, which are in contact with each other, and the image sensor chip may be closer to the transparent substrate than the logic chip.
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公开(公告)号:US20220122955A1
公开(公告)日:2022-04-21
申请号:US17357378
申请日:2021-06-24
Applicant: Samsung Electronics Co., Ltd.
Inventor: YONGHOE CHO , SUNKYOUNG SEO , CHAJEA JO
IPC: H01L25/16 , H01L23/498 , H01L23/538 , H01L23/14 , H01L23/00
Abstract: A semiconductor package includes a package substrate, a connection substrate on the package substrate, a first image sensor chip on the connection substrate, a second image sensor chip on the connection substrate, the second image sensor chip being horizontally spaced apart from the first image sensor chip, and a memory chip disposed on the package substrate and electrically connected to the first image sensor chip through the connection substrate. A distance between the first image sensor chip and the second image sensor chip is less than a thickness of the first image sensor chip.
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