公开(公告)号：US20240282548A1

公开(公告)日：2024-08-22

申请号：US18504630

申请日：2023-11-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yeoseon CHOI ,  Donghoon KWON

IPC: H01J37/16 ,  H01J37/08 ,  H01J37/18

CPC classification number: H01J37/16 ,  H01J37/08 ,  H01J37/18 ,  H01J2237/022 ,  H01J2237/1825

Abstract: A focused ion beam apparatus may include an ion beam emitter for emitting an ion beam, a focused ion beam chamber into which ion gas may be introduced, a sample stage in the focused ion beam chamber to support a wafer sample, and an air bag in the focused ion beam chamber. The airbag may be positioned to not interfere with the sample stage.

公开(公告)号：US20210242270A1

公开(公告)日：2021-08-05

申请号：US16904708

申请日：2020-06-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kangmook LIM ,  Sungin KIM ,  Changhwa KIM ,  Yeoseon CHOI

IPC: H01L27/146

Abstract: An image sensor is disclosed. The image sensor includes first, second, third and fourth unit pixels. Each of the unit pixels includes a first transfer transistor structure, a second transfer transistor structure and a third transfer transistor structure, a first source follower transistor structure, a second source follower transistor structure and a third source follower transistor structure, and a first selection transistor structure, a second selection transistor structure and a third selection transistor structure, the fourth unit pixel includes a fourth transfer transistor structure and a reset transistor structure, and each of the transfer transistor structures includes a channel electrode and a gate structure that surrounds side surfaces of the channel electrode.