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1.发明授权Field effect transistor having fin base and at lease one fin protruding from fin base 有权场效应晶体管具有翅片基底和至少一个翅片从翅片基部突出公开(公告)号：US08987836B2
公开(公告)日：2015-03-24
申请号：US13780855
申请日：2013-02-28
发明人： Myeong-cheol Kim , Cheol Kim , Jaehun Seo , YooJung Lee , Kisoo Chang , Siyoung Choi
IPC分类号： H01L29/78 , H01L29/66 , H01L21/336
CPC分类号： H01L29/785 , H01L29/7851
摘要： Field effect transistors including a source region and a drain region on a substrate, a fin base protruding from a top surface of the substrate, a plurality of fin portions extending upward from the fin base and connecting the source region with the drain region, a gate electrode on the fin portions, and a gate dielectric between the fin portions and the gate electrode may be provided. A top surface of the substrate may include a plurality of grooves (e.g., a plurality of convex portions and a plurality of concave portions). Further, a device isolation layer may be provided to expose upper portions of the plurality of fin portions and to cover top surfaces of the plurality of grooves.
摘要翻译： 场效应晶体管，其包括基板上的源极区域和漏极区域，从基板的顶面突出的翅片基板，从翅片基部向上延伸并将源极区域与漏极区域连接的多个翅片部， 翅片部分上的电极，以及翅片部分和栅电极之间的栅极电介质。 基板的顶面可以包括多个凹槽（例如，多个凸部和多个凹部）。 此外，可以设置器件隔离层以暴露多个翅片部分的上部并覆盖多个凹槽的顶表面。
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公开(公告)号：USRE49375E1
公开(公告)日：2023-01-17
申请号：US17129109
申请日：2020-12-21
发明人： Myeong-cheol Kim , Cheol Kim , Jaehun Seo , YooJung Lee , Kisoo Chang , Siyoung Choi
摘要： Field effect transistors including a source region and a drain region on a substrate, a fin base protruding from a top surface of the substrate, a plurality of fin portions extending upward from the fin base and connecting the source region with the drain region, a gate electrode on the fin portions, and a gate dielectric between the fin portions and the gate electrode may be provided. A top surface of the substrate may include a plurality of grooves (e.g., a plurality of convex portions and a plurality of concave portions). Further, a device isolation layer may be provided to expose upper portions of the plurality of fin portions and to cover top surfaces of the plurality of grooves.
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