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公开(公告)号：US20240155840A1
公开(公告)日：2024-05-09
申请号：US18416095
申请日：2024-01-18
发明人： Soodoo Chae , Myoungbum Lee , HuiChang Moon , Hansoo Kim , JinGyun Kim , Kihyun Kim , Siyoung Choi , Hoosung Cho
IPC分类号： H10B43/27 , H01L23/498 , H01L23/522 , H01L23/535 , H01L29/40 , H01L29/423 , H10B43/10 , H10B43/20 , H10B43/50
CPC分类号： H10B43/27 , H01L23/49844 , H01L23/5226 , H01L23/535 , H01L29/408 , H01L29/4234 , H10B43/10 , H10B43/20 , H10B43/50 , H01L2924/0002
摘要： A three-dimensional nonvolatile memory device and a method for fabricating the same include a semiconductor substrate, a plurality of active pillars, a plurality of gate electrodes, and a plurality of supporters. The semiconductor substrate includes a memory cell region and a contact region. The active pillars extend in the memory cell region perpendicularly to the semiconductor substrate. The gate electrodes intersect the active pillars, extend from the memory cell region to the contact region and are stacked on the semiconductor substrate. The supporters extend in the contact region perpendicularly to the semiconductor substrate to penetrate at least one or more of the gate electrodes.
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公开(公告)号：US20220037355A1
公开(公告)日：2022-02-03
申请号：US17497417
申请日：2021-10-08
发明人： Soodoo Chae , Myoungbum Lee , HuiChang Moon , Hansoo Kim , JinGyun Kim , Kihyun Kim , Siyoung Choi , Hoosung Cho
IPC分类号： H01L27/11582 , H01L27/11578 , H01L27/11575 , H01L23/498 , H01L23/535 , H01L29/40 , H01L29/423 , H01L23/522 , H01L27/11565
摘要： A three-dimensional nonvolatile memory device and a method for fabricating the same include a semiconductor substrate, a plurality of active pillars, a plurality of gate electrodes, and a plurality of supporters. The semiconductor substrate includes a memory cell region and a contact region. The active pillars extend in the memory cell region perpendicularly to the semiconductor substrate. The gate electrodes intersect the active pillars, extend from the memory cell region to the contact region and are stacked on the semiconductor substrate. The supporters extend in the contact region perpendicularly to the semiconductor substrate to penetrate at least one or more of the gate electrodes.
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公开(公告)号：US10546872B2
公开(公告)日：2020-01-28
申请号：US15634597
申请日：2017-06-27
发明人： Soodoo Chae , Myoungbum Lee , HuiChang Moon , Hansoo Kim , JinGyun Kim , Kihyun Kim , Siyoung Choi , Hoosung Cho
IPC分类号： H01L27/11582 , H01L27/11578 , H01L27/11575 , H01L23/498 , H01L23/535 , H01L29/40 , H01L29/423 , H01L23/522 , H01L27/11565
摘要： A three-dimensional nonvolatile memory device and a method for fabricating the same include a semiconductor substrate, a plurality of active pillars, a plurality of gate electrodes, and a plurality of supporters. The semiconductor substrate includes a memory cell region and a contact region. The active pillars extend in the memory cell region perpendicularly to the semiconductor substrate. The gate electrodes intersect the active pillars, extend from the memory cell region to the contact region and are stacked on the semiconductor substrate. The supporters extend in the contact region perpendicularly to the semiconductor substrate to penetrate at least one or more of the gate electrodes.
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公开(公告)号：US09735170B2
公开(公告)日：2017-08-15
申请号：US14973182
申请日：2015-12-17
发明人： Soodoo Chae , Myoungbum Lee , HuiChang Moon , Hansoo Kim , JinGyun Kim , Kihyun Kim , Siyoung Choi , Hoosung Cho
IPC分类号： H01L29/788 , H01L27/11582 , H01L27/11578 , H01L23/498 , H01L27/11575 , H01L23/535 , H01L29/40 , H01L29/423
CPC分类号： H01L27/11582 , H01L23/49844 , H01L23/5226 , H01L23/535 , H01L27/11565 , H01L27/11575 , H01L27/11578 , H01L29/408 , H01L29/4234 , H01L2924/0002 , H01L2924/00
摘要： A three-dimensional nonvolatile memory device and a method for fabricating the same include a semiconductor substrate, a plurality of active pillars, a plurality of gate electrodes, and a plurality of supporters. The semiconductor substrate includes a memory cell region and a contact region. The active pillars extend in the memory cell region perpendicularly to the semiconductor substrate. The gate electrodes intersect the active pillars, extend from the memory cell region to the contact region and are stacked on the semiconductor substrate. The supporters extend in the contact region perpendicularly to the semiconductor substrate to penetrate at least one or more of the gate electrodes.
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公开(公告)号：US20240164103A1
公开(公告)日：2024-05-16
申请号：US18418720
申请日：2024-01-22
发明人： Soodoo Chae , Myoungbum Lee , HuiChang Moon , Hansoo Kim , JinGyun Kim , Kihyun Kim , Siyoung Choi , Hoosung Cho
IPC分类号： H10B43/27 , H01L23/498 , H01L23/522 , H01L23/535 , H01L29/40 , H01L29/423 , H10B43/10 , H10B43/20 , H10B43/50
CPC分类号： H10B43/27 , H01L23/49844 , H01L23/5226 , H01L23/535 , H01L29/408 , H01L29/4234 , H10B43/10 , H10B43/20 , H10B43/50 , H01L2924/0002
摘要： A three-dimensional nonvolatile memory device and a method for fabricating the same include a semiconductor substrate, a plurality of active pillars, a plurality of gate electrodes, and a plurality of supporters. The semiconductor substrate includes a memory cell region and a contact region. The active pillars extend in the memory cell region perpendicularly to the semiconductor substrate. The gate electrodes intersect the active pillars, extend from the memory cell region to the contact region and are stacked on the semiconductor substrate. The supporters extend in the contact region perpendicularly to the semiconductor substrate to penetrate at least one or more of the gate electrodes.
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公开(公告)号：US20220059567A1
公开(公告)日：2022-02-24
申请号：US17517137
申请日：2021-11-02
发明人： Soodoo Chae , Myoungbum Lee , HuiChang Moon , Hansoo Kim , JinGyun Kim , Kihyun Kim , Siyoung Choi , Hoosung Cho
IPC分类号： H01L27/11582 , H01L23/535 , H01L29/40 , H01L29/423 , H01L27/11578 , H01L23/522 , H01L27/11575 , H01L27/11565 , H01L23/498
摘要： A three-dimensional nonvolatile memory device and a method for fabricating the same include a semiconductor substrate, a plurality of active pillars, a plurality of gate electrodes, and a plurality of supporters. The semiconductor substrate includes a memory cell region and a contact region. The active pillars extend in the memory cell region perpendicularly to the semiconductor substrate. The gate electrodes intersect the active pillars, extend from the memory cell region to the contact region and are stacked on the semiconductor substrate. The supporters extend in the contact region perpendicularly to the semiconductor substrate to penetrate at least one or more of the gate electrodes.
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公开(公告)号：US09502274B2
公开(公告)日：2016-11-22
申请号：US14281880
申请日：2014-05-19
发明人： Yi Koan Hong , Byung Lyul Park , Jumyong Park , Jisoon Park , Kyu-Ha Lee , Siyoung Choi
IPC分类号： H01L21/673
CPC分类号： H01L21/6733 , H01L21/6732 , H01L21/67323 , H01L21/67326
摘要： Embodiments of the present inventive concepts provide a wafer loader having one or more buffer zones to prevent damage to a wafer loaded in the wafer loader. The wafer loader may include a plurality of loading sections that protrude from a main body and are configured to be arranged at various locations along an edge of the wafer. Each of the loading sections may include a groove into which the edge of the wafer may be inserted. The loading section may include first and second protrusions having first and second inner sides, respectively, that face each other to define the groove therebetween. At least one of the first and second inner sides may include a recess to define the buffer zone.
摘要翻译： 本发明构思的实施例提供了具有一个或多个缓冲区的晶片装载器，以防止损坏装载在晶片装载器中的晶片。 晶片装载机可以包括从主体突出的多个装载部分，并被构造成沿着晶片的边缘布置在不同位置。 每个加载部分可以包括槽，其中可以插入晶片的边缘。 装载部分可以包括分别具有彼此面对以限定其间的凹槽的第一和第二内侧的第一和第二突起。 第一和第二内侧中的至少一个可以包括限定缓冲区的凹部。
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公开(公告)号：US09245839B2
公开(公告)日：2016-01-26
申请号：US14027599
申请日：2013-09-16
发明人： Soodoo Chae , Myoungbum Lee , HuiChang Moon , Hansoo Kim , JinGyun Kim , Kihyun Kim , Siyoung Choi , Hoosung Cho
IPC分类号： H01L29/792 , H01L23/498 , H01L27/115
CPC分类号： H01L27/11582 , H01L23/49844 , H01L23/5226 , H01L23/535 , H01L27/11565 , H01L27/11575 , H01L27/11578 , H01L29/408 , H01L29/4234 , H01L2924/0002 , H01L2924/00
摘要： A three-dimensional nonvolatile memory device and a method for fabricating the same include a semiconductor substrate, a plurality of active pillars, a plurality of gate electrodes, and a plurality of supporters. The semiconductor substrate includes a memory cell region and a contact region. The active pillars extend in the memory cell region perpendicularly to the semiconductor substrate. The gate electrodes intersect the active pillars, extend from the memory cell region to the contact region and are stacked on the semiconductor substrate. The supporters extend in the contact region perpendicularly to the semiconductor substrate to penetrate at least one or more of the gate electrodes.
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9.发明授权Field effect transistor having fin base and at lease one fin protruding from fin base 有权场效应晶体管具有翅片基底和至少一个翅片从翅片基部突出公开(公告)号：US08987836B2
公开(公告)日：2015-03-24
申请号：US13780855
申请日：2013-02-28
发明人： Myeong-cheol Kim , Cheol Kim , Jaehun Seo , YooJung Lee , Kisoo Chang , Siyoung Choi
IPC分类号： H01L29/78 , H01L29/66 , H01L21/336
CPC分类号： H01L29/785 , H01L29/7851
摘要： Field effect transistors including a source region and a drain region on a substrate, a fin base protruding from a top surface of the substrate, a plurality of fin portions extending upward from the fin base and connecting the source region with the drain region, a gate electrode on the fin portions, and a gate dielectric between the fin portions and the gate electrode may be provided. A top surface of the substrate may include a plurality of grooves (e.g., a plurality of convex portions and a plurality of concave portions). Further, a device isolation layer may be provided to expose upper portions of the plurality of fin portions and to cover top surfaces of the plurality of grooves.
摘要翻译： 场效应晶体管，其包括基板上的源极区域和漏极区域，从基板的顶面突出的翅片基板，从翅片基部向上延伸并将源极区域与漏极区域连接的多个翅片部， 翅片部分上的电极，以及翅片部分和栅电极之间的栅极电介质。 基板的顶面可以包括多个凹槽（例如，多个凸部和多个凹部）。 此外，可以设置器件隔离层以暴露多个翅片部分的上部并覆盖多个凹槽的顶表面。
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公开(公告)号：US11871571B2
公开(公告)日：2024-01-09
申请号：US17517137
申请日：2021-11-02
发明人： Soodoo Chae , Myoungbum Lee , HuiChang Moon , Hansoo Kim , JinGyun Kim , Kihyun Kim , Siyoung Choi , Hoosung Cho
IPC分类号： H10B43/27 , H10B43/10 , H10B43/20 , H10B43/50 , H01L23/498 , H01L23/535 , H01L29/40 , H01L29/423 , H01L23/522
CPC分类号： H10B43/27 , H01L23/49844 , H01L23/5226 , H01L23/535 , H01L29/408 , H01L29/4234 , H10B43/10 , H10B43/20 , H10B43/50 , H01L2924/0002 , H01L2924/0002 , H01L2924/00
摘要： A three-dimensional nonvolatile memory device and a method for fabricating the same include a semiconductor substrate, a plurality of active pillars, a plurality of gate electrodes, and a plurality of supporters. The semiconductor substrate includes a memory cell region and a contact region. The active pillars extend in the memory cell region perpendicularly to the semiconductor substrate. The gate electrodes intersect the active pillars, extend from the memory cell region to the contact region and are stacked on the semiconductor substrate. The supporters extend in the contact region perpendicularly to the semiconductor substrate to penetrate at least one or more of the gate electrodes.
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