公开(公告)号：US20230136881A1

公开(公告)日：2023-05-04

申请号：US17891760

申请日：2022-08-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Panjae PARK ,  Yoonjin KIM ,  Kwanyoung CHUN

IPC: G06F30/392 ,  H01L23/528 ,  G06F30/394

Abstract: A cell including individual source regions includes active regions extending in a first direction and being spaced apart from each other in a second direction different from the first direction, gate lines extending across the active regions in the second direction and being spaced apart from each other in the first direction, first contacts arranged on both sides of each of the gate lines in the first direction and connected to the active regions, metal lines arranged over the gate lines and the first contacts, the metal lines extending in the first direction and being spaced apart from each other in the second direction, second contacts connecting the gate lines to the metal lines, and vias connecting the first contacts to the metal lines.

公开(公告)号：US20210151426A1

公开(公告)日：2021-05-20

申请号：US16931585

申请日：2020-07-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jungkyu CHAE ,  Kwanyoung CHUN ,  Yoonjin KIM

IPC: H01L27/02

Abstract: A semiconductor device includes a pair of first and second dummy active regions extending in a first horizontal direction and spaced apart from each other in a second horizontal direction; a pair of first and second circuit active regions extending in the first horizontal direction and spaced apart in the second horizontal direction; and a plurality of line patterns extending in the second horizontal direction and spaced apart in the first horizontal direction. The pair of first and second dummy active regions may be between a pair of line patterns adjacent to each other among the plurality of line patterns. At least one of the first and second dummy active regions may have a width-changing portion in which a width of the at least one of the first and second dummy active regions changes in the second horizontal direction between the pair of line patterns adjacent to each other.

公开(公告)号：US20230268336A1

公开(公告)日：2023-08-24

申请号：US18140115

申请日：2023-04-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jungkyu CHAE ,  Kwanyoung CHUN ,  Yoonjin KIM

IPC: H01L27/02

CPC classification number: H01L27/0207

Abstract: A semiconductor device includes a pair of first and second dummy active regions extending in a first horizontal direction and spaced apart from each other in a second horizontal direction; a pair of first and second circuit active regions extending in the first horizontal direction and spaced apart in the second horizontal direction; and a plurality of line patterns extending in the second horizontal direction and spaced apart in the first horizontal direction. The pair of first and second dummy active regions may be between a pair of line patterns adjacent to each other among the plurality of line patterns. At least one of the first and second dummy active regions may have a width-changing portion in which a width of the at least one of the first and second dummy active regions changes in the second horizontal direction between the pair of line patterns adjacent to each other.

公开(公告)号：US20230022952A1

公开(公告)日：2023-01-26

申请号：US17960277

申请日：2022-10-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Taehyung KIM ,  Kwanyoung CHUN ,  Yoonjin KIM

IPC: H01L29/66 ,  H01L21/768 ,  H01L21/8234 ,  H01L29/06 ,  H01L29/78 ,  H01L29/08 ,  H01L29/423 ,  H01L21/02 ,  H01L29/786

Abstract: Disclosed is a semiconductor device comprising an active region that protrudes upwardly from a substrate, a plurality of channel patterns that are spaced apart from each other in a first direction on the active region, and a gate electrode that extends in the first direction on the active region and covers the plurality of channel patterns. Each of the plurality of channel patterns includes a plurality of semiconductor patterns that are spaced apart from each other in a direction perpendicular to a top surface of the active region. The gate electrode covers the top surface of the active region between the plurality of channel patterns.