公开(公告)号：US20230369039A1

公开(公告)日：2023-11-16

申请号：US18315322

申请日：2023-05-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eunhyea KO ,  Daihyun Kim ,  Thanh Cuong Nguyen ,  Soyoung Lee ,  Jihyun Lee ,  Hoon Han ,  Byungkeun Hwang ,  Hiroyuki Uchiuzou ,  Kiyoshi Murata ,  Tomoharu Yoshino ,  Youjoung Cho

IPC: H01L21/02 ,  H01L21/311

CPC classification number: H01L21/0212 ,  H01L21/02307 ,  H01L21/02315 ,  H01L21/31133 ,  H01L21/31111

Abstract: A method of manufacturing a semiconductor device is provided. The method includes providing a first layer having a first surface and a second layer having a second surface orthogonal to the first surface in a vertical direction, forming an inhibitor layer conformally on the first surface and the second surface, exposing the second surface by selectively removing the inhibitor layer on the second surface among the first surface and the second surface, the exposing of the second surface may include selectively removing an edge portion of the inhibitor layer on the first surface, the edge portion contacting the second surface, and forming an interest layer on the exposed second surface.