公开(公告)号：US20230215723A1

公开(公告)日：2023-07-06

申请号：US18147733

申请日：2022-12-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： EUNHYEA KO ,  Hoon Han ,  Soyoung Lee ,  Thanh Cuong Nguyen ,  Hiroyuki Uchiuzou ,  Kiyoshi Murata ,  Tomoharu Yoshino ,  Daekeon Kim ,  Younjoung Cho ,  Jiyu Choi ,  Byungkeun Hwang

IPC: H01L21/02 ,  C23C16/455 ,  C23C2/02 ,  H01L21/311

CPC classification number: H01L21/0217 ,  H01L21/02323 ,  H01L21/0226 ,  C23C16/45525 ,  C23C2/026 ,  H01L21/31116

Abstract: To manufacture an integrated circuit (IC) device, a structure in which a first material film including silicon atoms and nitrogen atoms and a second material film devoid of nitrogen atoms is formed on a substrate. A carbonyl compound having a functional group without an α-hydrogen is applied to the structure, and thus, an inhibitor is selectively formed only on an exposed surface of the first material film from among the first material film and the second material film.

公开(公告)号：US20230369039A1

公开(公告)日：2023-11-16

申请号：US18315322

申请日：2023-05-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eunhyea KO ,  Daihyun Kim ,  Thanh Cuong Nguyen ,  Soyoung Lee ,  Jihyun Lee ,  Hoon Han ,  Byungkeun Hwang ,  Hiroyuki Uchiuzou ,  Kiyoshi Murata ,  Tomoharu Yoshino ,  Youjoung Cho

IPC: H01L21/02 ,  H01L21/311

CPC classification number: H01L21/0212 ,  H01L21/02307 ,  H01L21/02315 ,  H01L21/31133 ,  H01L21/31111

Abstract: A method of manufacturing a semiconductor device is provided. The method includes providing a first layer having a first surface and a second layer having a second surface orthogonal to the first surface in a vertical direction, forming an inhibitor layer conformally on the first surface and the second surface, exposing the second surface by selectively removing the inhibitor layer on the second surface among the first surface and the second surface, the exposing of the second surface may include selectively removing an edge portion of the inhibitor layer on the first surface, the edge portion contacting the second surface, and forming an interest layer on the exposed second surface.