公开(公告)号：US20230253241A1

公开(公告)日：2023-08-10

申请号：US17965927

申请日：2022-10-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youncheol JEONG ,  Jaeung KOO ,  Boun YOON ,  Ilyoung YOON

IPC: H01L21/762 ,  H01L27/092 ,  H01L23/522 ,  H01L23/528 ,  H01L21/8238

CPC classification number: H01L21/76232 ,  H01L27/0924 ,  H01L23/5226 ,  H01L23/5283 ,  H01L21/823878 ,  H01L29/7851

Abstract: A semiconductor device may include a substrate including an active pattern extending in a first direction, a gate electrode extending in a second direction and crossing the active pattern, a gate capping pattern covering a top surface of the gate electrode, and a separation structure at a side of the gate electrode and extending in the second direction to penetrate the active pattern in a third direction. The first and second directions are parallel to a bottom surface of the substrate and are perpendicular to the third direction. The separation structure may include a filling pattern, which extends in the third direction to penetrate the active pattern, and a vertical insulating pattern, which is interposed between the filling pattern and the gate electrode. A top surface of the separation structure may be located at a height lower than a top surface of the gate capping pattern.