公开(公告)号：US20230253241A1

公开(公告)日：2023-08-10

申请号：US17965927

申请日：2022-10-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youncheol JEONG ,  Jaeung KOO ,  Boun YOON ,  Ilyoung YOON

IPC: H01L21/762 ,  H01L27/092 ,  H01L23/522 ,  H01L23/528 ,  H01L21/8238

CPC classification number: H01L21/76232 ,  H01L27/0924 ,  H01L23/5226 ,  H01L23/5283 ,  H01L21/823878 ,  H01L29/7851

Abstract: A semiconductor device may include a substrate including an active pattern extending in a first direction, a gate electrode extending in a second direction and crossing the active pattern, a gate capping pattern covering a top surface of the gate electrode, and a separation structure at a side of the gate electrode and extending in the second direction to penetrate the active pattern in a third direction. The first and second directions are parallel to a bottom surface of the substrate and are perpendicular to the third direction. The separation structure may include a filling pattern, which extends in the third direction to penetrate the active pattern, and a vertical insulating pattern, which is interposed between the filling pattern and the gate electrode. A top surface of the separation structure may be located at a height lower than a top surface of the gate capping pattern.

公开(公告)号：US20200243374A1

公开(公告)日：2020-07-30

申请号：US16539064

申请日：2019-08-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung Hoon CHOI ,  Jaeung KOO ,  Kwansung KIM ,  Bo Yun KIM ,  Wandon KIM ,  Boun YOON ,  Jeonghyuk YIM ,  Yeryung JEON

IPC: H01L21/768 ,  H01L27/105 ,  H01L21/3105 ,  H01L23/528 ,  H01L23/532

Abstract: A semiconductor device and a method of fabricating a semiconductor device, the semiconductor device including a semiconductor substrate including a first region and a second region; an interlayer insulating layer on the semiconductor substrate, the interlayer insulating layer including a first opening on the first region and having a first width; and a second opening on the second region and having a second width, the second width being greater than the first width; at least one first metal pattern filling the first opening; a second metal pattern in the second opening; and a filling pattern on the second metal pattern in the second opening, wherein the at least one first metal pattern and the second metal pattern each include a same first metal material, and the filling pattern is formed of a non-metal material.