公开(公告)号：US20240128290A1

公开(公告)日：2024-04-18

申请号：US18480479

申请日：2023-10-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung Hyun LEE ,  Young Chan KIM ,  Young Gu JIN ,  Young Sun OH

IPC: H01L27/146 ,  G01S7/481

CPC classification number: H01L27/14614 ,  G01S7/4816 ,  H01L27/14627 ,  H01L27/14645

Abstract: A depth sensor includes a substrate that includes a first face and a second face opposite to each other in a first direction; a photoelectric conversion element disposed in the substrate; and first and second taps connected to the photoelectric conversion element. Each of the first and second taps includes: a floating diffusion area disposed in the substrate; a transfer transistor connected to the floating diffusion area; a photo transistor connected to the photoelectric conversion element; a tap transfer transistor connected to the photo transistor; and a storage transistor connected to the tap transfer transistor and the transfer transistor. The storage transistor includes a storage gate electrode. The storage gate electrode includes a first extension and a second extension that extend from the first face of the substrate toward the second face, and the first extension and the second extension are spaced apart from each other in a second direction.

公开(公告)号：US20160049429A1

公开(公告)日：2016-02-18

申请号：US14819715

申请日：2015-08-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jun Suk LEE ,  Young Chan KIM ,  Jung Chak AHN ,  Young Woo JUNG

IPC: H01L27/146

CPC classification number: H01L27/1461 ,  H01L27/14612 ,  H01L27/14614 ,  H01L27/14638 ,  H01L27/14643 ,  H01L27/14656 ,  H04N5/37452

Abstract: A global shutter image sensor according to an exemplary embodiment of the present inventive concepts includes a semiconductor substrate including a first surface and a second surface, a photo-electric conversion region formed in the semiconductor substrate, a storage diode formed in a vicinity of the photo-electric conversion region in the semiconductor substrate, a drain region formed above the photo-electric conversion region in the semiconductor substrate, a floating diffusion region formed above the storage diode in the semiconductor substrate, an overflow gate transferring first charges from the photo-electric conversion region to the drain region, a storage gate transferring second charges from the photo-electric conversion region to the storage diode, and a transfer gate transferring the second charges from the storage diode to the floating diffusion region. The overflow gate, the photo-electric conversion region, the storage gate, the storage diode, the transfer gate, and the floating diffusion region are formed in a row.

Abstract translation: 根据本发明构思的示例性实施例的全局快门图像传感器包括：半导体衬底，包括第一表面和第二表面;形成在半导体衬底中的光电转换区域;形成在照片附近的存储二极管 半导体衬底中的光电转换区域上形成的漏极区域，形成在半导体衬底中的存储二极管上方的浮动扩散区域;溢流栅极，从光电转换区域 转换区域到漏极区域，存储栅极将第二电荷从光电转换区域转移到存储二极管;以及传输栅极，将第二电荷从存储二极管转移到浮动扩散区域。 溢流栅，光电转换区，存储栅极，存储二极管，传输栅极和浮置扩散区域形成一行。

公开(公告)号：US20190296070A1

公开(公告)日：2019-09-26

申请号：US16206118

申请日：2018-11-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young Gu JIN ,  Young Chan KIM ,  Min-Sun KEEL

IPC: H01L27/146 ,  H04N13/254

Abstract: Image sensors are provided. An image sensor includes a substrate that includes a pixel region, a first surface, and a second surface that is opposite the first surface. The image sensor includes first and second photogates that are on the first surface and are configured to generate electric charge responsive to incident light in the pixel region. Moreover, the image sensor includes first and second lenses that are on the second surface and are configured to pass the incident light toward the first and second photogates.

公开(公告)号：US20240178252A1

公开(公告)日：2024-05-30

申请号：US18332270

申请日：2023-06-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seo Joo KIM ,  Sung Hyuck CHO ,  Young Chan KIM ,  Seung Hyun LEE ,  Young Gu JIN

IPC: H01L27/146

CPC classification number: H01L27/14627 ,  H01L27/14603 ,  H01L27/14621

Abstract: In one embodiment, an image sensor includes unit pixels, each of the unit pixel including a first sub-pixel and a second sub-pixel adjacent to the first sub-pixel in a plan view of the image sensor; and a lens array including a first sub-lens area on the first sub-pixel of each unit pixel and a second sub-lens area on the second sub-pixel of each unit pixel. The first sub-lens area may include a first micro lens, and the second sub-lens area includes a second micro lens. In addition, the first micro lens may include a depression defined in a central area thereof.

公开(公告)号：US20200286938A1

公开(公告)日：2020-09-10

申请号：US16551114

申请日：2019-08-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young Gu JIN ,  Yong Hun KWON ,  Young Chan KIM ,  Sae Young KIM ,  Sung Young SEO ,  Moo Sup LIM ,  Tae Sub JUNG ,  Sung Ho CHOI

IPC: H01L27/146

Abstract: An image sensor includes a plurality of pixels, at least one of the pixels comprising: a photodiode configured to generate charges in response to light; and a pixel circuit disposed on the substrate, and including a storage transistor configured to store the charges generated by the photodiode, and a transfer transistor connected between the storage transistor and a floating diffusion node, wherein a potential of a boundary region between the storage transistor and the transfer transistor has a first potential when the transfer transistor is in a turned-off state, and has a second potential, lower than the first potential, when the transfer transistor is in a turned-on state.