公开(公告)号：US20210305497A1

公开(公告)日：2021-09-30

申请号：US17344206

申请日：2021-06-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwang Seok KIM ,  Young Man JANG ,  Ung Hwan PI

IPC: H01L43/10 ,  H01L43/02 ,  G11C11/16 ,  H01L27/22

Abstract: In one embodiment, the magnetic memory device includes a free layer structure having a variable magnetization direction. The free layer structure includes a first free layer, the first free layer being a first Heusler alloy; a coupling layer on the first free layer, the coupling layer including a metal oxide layer; and a second free layer on the metal oxide layer, the second free layer being a second Heusler alloy, the second Heusler alloy being different from the first Heusler alloy.