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    SEMICONDUCTOR MEMORY DEVICE
    3.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE 有权

    公开(公告)号：US20230110711A1

    公开(公告)日：2023-04-13

    申请号：US17814057

    申请日：2022-07-21

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Rahul MISHRA ,  Hyunsoo YANG ,  Ung Hwan PI

    IPC: G11C11/16 ,  H01L27/22 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

    Abstract: A semiconductor memory device may be provided. The semiconductor memory device may include data storage patterns having respective first sides and respective second sides, a spin-orbit coupling (SOC) channel layer in common contact with the first sides of the data storage patterns, the SOC channel layer is configured to provide a spin-orbit torque to the data storage patterns, read access transistors connected between the second sides of respective ones of the data storage patterns and respective data lines, a write access transistor connected between a first end of the SOC channel layer and a source line, and a bit line connected to a second end of the SOC channel layer. Each of the data storage patterns comprises a free layer in contact with the SOC channel layer and an oxygen reservoir layer in contact with the free layer.

    MAGNETIC MEMORY DEVICE
    4.
    发明申请
    MAGNETIC MEMORY DEVICE 有权

    公开(公告)号：US20220123201A1

    公开(公告)日：2022-04-21

    申请号：US17490353

    申请日：2021-09-30

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Ung Hwan PI ,  Seonggeon PARK ,  Jeong-Heon PARK ,  Sung Chul LEE

    IPC: H01L43/02 ,  H01L27/22 ,  H01F10/32

    Abstract: A magnetic memory device includes a first magnetic layer extending in a first direction, a pinned layer on the first magnetic layer, and a second magnetic layer vertically overlapping with the pinned layer with the first magnetic layer interposed between the pinned layer and the second magnetic layer. The first magnetic layer includes, a plurality of magnetic domains arranged in the first direction, and at least one magnetic domain wall between the plurality of magnetic domains, and a magnetization direction of the second magnetic layer is substantially parallel to a top surface of the first magnetic layer.

    MAGNETIC MEMORY DEVICES
    6.
    发明申请
    MAGNETIC MEMORY DEVICES 审中-公开

    公开(公告)号：US20200152700A1

    公开(公告)日：2020-05-14

    申请号：US16434478

    申请日：2019-06-07

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Joonmyoung LEE ,  Ung Hwan PI ,  Eunsun NOH ,  Yong Sung PARK

    IPC: H01L27/22 ,  H01L43/12 ,  H01L43/08 ,  H01L43/02 ,  G11C11/16

    Abstract: A magnetic memory device includes a first magnetic tunnel junction pattern on a substrate, a second magnetic tunnel junction pattern on the first magnetic tunnel junction pattern, and a conductive line between the first magnetic tunnel junction pattern and the second magnetic tunnel junction pattern. The conductive line is configured such that a current flowing through the conductive line flows in parallel to an interface between the conductive line and each of the first and second magnetic tunnel junction patterns.

    MEMRISTOR ELEMENT, SYNAPSE ELEMENT AND NEUROMORPHIC PROCESSOR INCLUDING THE SAME
    7.
    发明申请
    MEMRISTOR ELEMENT, SYNAPSE ELEMENT AND NEUROMORPHIC PROCESSOR INCLUDING THE SAME 有权

    公开(公告)号：US20220293157A1

    公开(公告)日：2022-09-15

    申请号：US17684573

    申请日：2022-03-02

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jeong-Heon PARK ,  Ung Hwan PI

    IPC: G11C11/16 ,  G11C11/18

    Abstract: Disclosed are a memristor element, a synapse element and a neuromorphic processor including the same. The memristor element includes a free layer including a domain wall; and a fixed layer including a material of which a magnetization direction is fixed, wherein a position of the domain wall in the free layer is changeable based on a spin orbit torque (SOT) generated by a current introduced from an outside, and wherein a resistance value, measured through both ends of the fixed layer, is based on the position of the domain wall and on a Hall voltage.

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