公开(公告)号：US20130147048A1

公开(公告)日：2013-06-13

申请号：US13707394

申请日：2012-12-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Bong-jin KUH ,  Sang-ryol Yang ,  Soon-wook Jung ,  Young-sub You ,  Byung-hong Chung ,  Han-mei Choi ,  Jong-sung Lim

IPC: H01L23/498

CPC classification number: H01L23/49827 ,  H01L27/10814 ,  H01L27/10852 ,  H01L27/10876 ,  H01L27/10891 ,  H01L28/91 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device includes a plurality of electrode structures perpendicularly extending on a substrate, and at least one support unit extending between the plurality of electrode structures. The support unit includes at least one support layer including a noncrystalline metal oxide contacting a part of the plurality of electrode structures. Related devices and fabrication methods are also discussed.

Abstract translation: 半导体器件包括在衬底上垂直延伸的多个电极结构以及在多个电极结构之间延伸的至少一个支撑单元。 支撑单元包括至少一个支撑层，其包括接触多个电极结构的一部分的非结晶金属氧化物。 还讨论了相关设备和制造方法。

公开(公告)号：US08970039B2

公开(公告)日：2015-03-03

申请号：US13707394

申请日：2012-12-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Bong-jin Kuh ,  Sang-ryol Yang ,  Soon-wook Jung ,  Young-sub You ,  Byung-hong Chung ,  Han-mei Choi ,  Jong-sung Lim

IPC: H01L23/12 ,  H01L23/48 ,  H01L29/40 ,  H01L23/498 ,  H01L27/108 ,  H01L49/02

CPC classification number: H01L23/49827 ,  H01L27/10814 ,  H01L27/10852 ,  H01L27/10876 ,  H01L27/10891 ,  H01L28/91 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device includes a plurality of electrode structures perpendicularly extending on a substrate, and at least one support unit extending between the plurality of electrode structures. The support unit includes at least one support layer including a noncrystalline metal oxide contacting a part of the plurality of electrode structures. Related devices and fabrication methods are also discussed.

Abstract translation: 半导体器件包括在衬底上垂直延伸的多个电极结构以及在多个电极结构之间延伸的至少一个支撑单元。 支撑单元包括至少一个支撑层，其包括接触多个电极结构的一部分的非结晶金属氧化物。 还讨论了相关设备和制造方法。