公开(公告)号：US10937771B2

公开(公告)日：2021-03-02

申请号：US16430428

申请日：2019-06-04

申请人： Samsung Electronics Co., Ltd.

发明人： Jichul Kim ,  Jae Choon Kim ,  Hansung Ryu ,  KyongSoon Cho ,  YoungSang Cho ,  Yeo-Hoon Yoon

IPC分类号： H01L23/48 ,  H01L25/10 ,  H01L21/48 ,  H01L21/56 ,  H01L23/538 ,  H01L23/00 ,  H01L25/00 ,  H01L21/683 ,  H01L23/498 ,  H01L29/06

摘要： A semiconductor package is provided which includes a redistribution substrate, an interconnect substrate on the redistribution substrate, a metal layer on the semiconductor chip, a semiconductor chip on the redistribution substrate and in the hole of the interconnect substrate, and a mold layer in a gap between the semiconductor chip and the interconnect substrate. The interconnect substrate includes a hole penetrating thereinside. The interconnect substrate includes base layers and a conductive member extending through the base layers. A top surface of the interconnect substrate is positioned either above or below the level of the top surface of the metal layer.

公开(公告)号：US10347611B2

公开(公告)日：2019-07-09

申请号：US15406925

申请日：2017-01-16

申请人： Samsung Electronics Co., Ltd.

发明人： Jichul Kim ,  Jae Choon Kim ,  Hansung Ryu ,  KyongSoon Cho ,  YoungSang Cho ,  Yeo-Hoon Yoon

IPC分类号： H01L23/48 ,  H01L25/10 ,  H01L21/48 ,  H01L21/56 ,  H01L23/538 ,  H01L23/00 ,  H01L25/00 ,  H01L23/498 ,  H01L29/06

摘要： A semiconductor package is provided which includes a redistribution substrate, an interconnect substrate on the redistribution substrate, a metal layer on the semiconductor chip, a semiconductor chip on the redistribution substrate and in the hole of the interconnect substrate, and a mold layer in a gap between the semiconductor chip and the interconnect substrate. The interconnect substrate includes a hole penetrating thereinside. The interconnect substrate includes base layers and a conductive member extending through the base layers. A top surface of the interconnect substrate is positioned either above or below the level of the top surface of the metal layer.