公开(公告)号：US20250107190A1

公开(公告)日：2025-03-27

申请号：US18652010

申请日：2024-05-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jonggu LEE ,  Hyeonjin KIM ,  Kyungwon KANG ,  Hyunjae KANG ,  Youngha KIM ,  Jeonggil KIM ,  Jinman KIM ,  Sunghyup KIM ,  Sanghoon LEE

IPC: H01L29/04 ,  H01L23/00 ,  H01L23/498

Abstract: A semiconductor device may include a first semiconductor structure including a first device layer on an upper surface of a first substrate structure, the first device layer including a first region of the semiconductor device; and a second semiconductor structure including a second device layer on a lower surface of a second substrate structure, the second device layer connected to the first device layer and including a second region of the semiconductor device. The first substrate structure may include a first wafer and a second wafer on the first wafer. The second wafer may be in contact with the first device layer. The second substrate structure may include a third wafer and a fourth wafer on a lower surface of the third wafer. The fourth wafer may be in contact with the second device layer. An upper surface of the second wafer may be a (100) crystal plane.