公开(公告)号：US20250046727A1

公开(公告)日：2025-02-06

申请号：US18426730

申请日：2024-01-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeongdu KIM ,  Sunghyup KIM ,  Woongkee KIM

IPC: H01L23/544 ,  H01L21/02

Abstract: A wafer includes: a scribe lane surrounding a semiconductor chip region on one surface of the wafer body; and a stress adjustment portion in the scribe lane and including a first film and a second film that have at least different materials from that of the wafer body. The wafer may be provided before a semiconductor process.

公开(公告)号：US20230037038A1

公开(公告)日：2023-02-02

申请号：US17702105

申请日：2022-03-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byoungcheol HWANG ,  Sangwook LEE ,  Sunghyup KIM ,  Keonwoo KIM ,  Junyoung CHOI ,  Sanghoon CHEONG

IPC: C23C16/455 ,  C23C16/458

Abstract: A deposition apparatus, includes a chamber having at least one first gas inlet therein. A fixed chuck is installed in the chamber and an electrostatic chuck is installed on the fixed chuck. An edge ring is disposed on an edge of the electrostatic chuck. A shower head is disposed above the edge ring. A baffle is disposed above the shower head and an upper electrode is disposed above the baffle. A gas guide member is disposed above the upper electrode so that a flow path provided in the upper electrode and the first gas inlet are connected. The gas guide member has a flow path hole penetrating in upward and downward directions, and a plurality of guide holes are provided on an inner surface of the gas guide member.

公开(公告)号：US20240061982A1

公开(公告)日：2024-02-22

申请号：US18227587

申请日：2023-07-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hanahchim CHOUNG ,  Seokryul KIM ,  Sunghyup KIM

IPC: G06F30/28

CPC classification number: G06F30/28

Abstract: A pipe blockage prediction method includes generating a first simulation model by performing a first simulation based on pipe information and fluid information including a flow rate and pressure of a fluid in a pipe, generating a second simulation model by performing a second simulation that is different from the first simulation, based on the pipe information and the fluid information, generating a third simulation model through machine learning, based on the first simulation model and the second simulation model, and predicting pipe blockage for each of a plurality of sections of the pipe based on the third simulation model.

公开(公告)号：US20230071131A1

公开(公告)日：2023-03-09

申请号：US17709534

申请日：2022-03-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hoseok SONG ,  Sunghyup KIM ,  Injae LEE ,  Jeonggil KIM

IPC: G03F7/20

Abstract: A collector mirror for an extreme ultraviolet (EUV) light generator includes a first mirror in a vessel, the vessel being configured to receive a material and a laser beam for generating the EUV light, a second mirror surrounding the first mirror, and a detachable third mirror between the first mirror and the second mirror, the third mirror having an inner diameter that is not smaller than an outer diameter of the first mirror, and an outer diameter that is not larger than an inner diameter of the second mirror.

公开(公告)号：US20210074558A1

公开(公告)日：2021-03-11

申请号：US17016881

申请日：2020-09-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang Ki NAM ,  Jang-Yeob LEE ,  Sungyeol KIM ,  Sunghyup KIM ,  Soonam PARK ,  Siqing LU

IPC: H01L21/67 ,  H01J37/32

Abstract: A substrate processing apparatus, including a processing chamber including a first internal space and a second internal space arranged in a vertical direction, the first internal space being configured to receive process gas to generate plasma; an induction electrode configured to divide the processing chamber, and having a plurality of through-holes arranged to connect the first internal space and the second internal space, wherein the plurality of through-holes are configured to induce an ion beam extracted from ions included in the plasma generated in the first internal space; a radical supply located in the second internal space, and including a reservoir configured to receive chemical liquid in which an object to be processed is immersed, and a lower electrode configured to apply nanopulses to the reservoir to generate radicals from the chemical liquid; and a chemical liquid supply configured to supply the chemical liquid to the reservoir.

公开(公告)号：US20220174806A1

公开(公告)日：2022-06-02

申请号：US17393474

申请日：2021-08-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Minseok CHOI ,  Injae LEE ,  Inho CHOI ,  Sungyeol KIM ,  Sunghyup KIM ,  Jeonggil KIM ,  Jongbin PARK

IPC: H05G2/00 ,  G03F7/20 ,  G21K1/06

Abstract: A droplet accelerating assembly includes an acceleration chamber extending in a first direction parallel to an ejection direction of the droplet, the acceleration chamber having a first side connected to the droplet generator, a second side opposite the first side in the first direction, the second side including a discharge hole, and a fluid flow path, a pressure controller connected to the fluid flow path of the acceleration chamber, the pressure controller being configured to adjust an internal pressure of the acceleration chamber, an electrifier in the acceleration chamber, the electrifier being configured to electrify the droplet ejected by the droplet generator into an electrified droplet, and an accelerator in the acceleration chamber, the accelerator being configured to accelerate the electrified droplet.

公开(公告)号：US20210153332A1

公开(公告)日：2021-05-20

申请号：US16990059

申请日：2020-08-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Injae LEE ,  Sunghyup KIM ,  Jeonggil KIM ,  Jinyong KIM ,  Hyuck SHIN ,  Sungho JANG ,  Inho CHOI

IPC: H05G2/00 ,  G03F7/20

Abstract: A droplet generator for extreme ultraviolet (EUV) exposure device includes a nozzle body with an inclined portion, the nozzle body with the inclined portion having a nozzle shape to discharge a target material in a liquid state, a gas supply pipe, at least a portion of the gas supply pipe being in an internal space of the nozzle body and of the inclined portion, and the gas supply pipe to discharge gas toward the target material in the liquid state, a target material supply unit connected to the nozzle body, the target material supply unit including a first valve, a gas supply unit connected to the gas supply pipe, the gas supply unit including a second valve, and a control unit connected to the first and second valves to control a supply amount of the target material and the gas.

公开(公告)号：US20210098415A1

公开(公告)日：2021-04-01

申请号：US16837025

申请日：2020-04-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jonggu LEE ,  Sunghyup KIM ,  Byungjo KIM ,  Sanghoon LEE ,  Sukwon LEE ,  Sebin CHOI

IPC: H01L23/00 ,  B29C65/30 ,  B29C65/00

Abstract: A bonding head for a die bonding apparatus and a die bonding apparatus including the bonding head, the bonding head including a head body; a thermal pressurizer mounted on a lower surface of the head body, the thermal pressurizer being configured to hold and heat at least one die and including a heater having a first heating surface that faces a held surface of the die; and a thermal compensator at an outer region of the die, the thermal compensator extending downwardly from the lower surface of the head body and including at least one thermal compensating block having a second heating surface that emits heat from a heating source therein and that faces a side surface of the die held on the thermal pressurizer.

公开(公告)号：US20250128215A1

公开(公告)日：2025-04-24

申请号：US18639634

申请日：2024-04-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Myeongjun GIL ,  Sunghyup KIM ,  Sebin CHOI

IPC: B01F25/314 ,  B01F23/10 ,  B01F25/31 ,  B01F101/58

Abstract: A gas mixer may include a first gas channel, a first distribution channel, a second gas channel and a plurality of first connection channels. The first gas channel may be configured to supply a first gas into a reaction chamber. The first distribution channel may surround the first gas channel and is configured to uniformly distribute a second gas within the first distribution channel. The second gas channel may be configured to supply the second gas into the first distribution channel. The plurality of the first connection channels may be connected between the first distribution channel and the first gas channel. Thus, the second gas may be uniformly distributed in the cylindrical first distribution channel. The second gas may then be supplied to the first gas channel through the first connection channels. The second gas may be mixed with the first gas to form a mixed gas. As a result, the mixed gas may be uniformly distributed in the reaction chamber.

公开(公告)号：US20250107190A1

公开(公告)日：2025-03-27

申请号：US18652010

申请日：2024-05-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jonggu LEE ,  Hyeonjin KIM ,  Kyungwon KANG ,  Hyunjae KANG ,  Youngha KIM ,  Jeonggil KIM ,  Jinman KIM ,  Sunghyup KIM ,  Sanghoon LEE

IPC: H01L29/04 ,  H01L23/00 ,  H01L23/498

Abstract: A semiconductor device may include a first semiconductor structure including a first device layer on an upper surface of a first substrate structure, the first device layer including a first region of the semiconductor device; and a second semiconductor structure including a second device layer on a lower surface of a second substrate structure, the second device layer connected to the first device layer and including a second region of the semiconductor device. The first substrate structure may include a first wafer and a second wafer on the first wafer. The second wafer may be in contact with the first device layer. The second substrate structure may include a third wafer and a fourth wafer on a lower surface of the third wafer. The fourth wafer may be in contact with the second device layer. An upper surface of the second wafer may be a (100) crystal plane.