公开(公告)号：US20220399401A1

公开(公告)日：2022-12-15

申请号：US17826944

申请日：2022-05-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yongseok Kwon ,  Youngsik Rho ,  Sangwon Park ,  Sungwhan Seo ,  Dongkyu Lee ,  Jaeyong Jeong

IPC: H01L27/24

Abstract: A memory device including a first substrate extending in a first direction and a second direction perpendicular to the first direction, the first substrate including a memory cell region and a first peripheral circuit region, and a second substrate, including a second peripheral circuit region, extending in the first and second direction, the second substrate overlapping the first substrate in a third direction perpendicular to the first and second direction. The memory device also including a memory cell array disposed in the memory cell region and including a plurality of vertical channel structures extending in the third direction, a peripheral circuit disposed in the second peripheral circuit region, and a resistor extending in the third direction through the first peripheral circuit region and the second peripheral circuit region. The resistor including a plurality of resistance contact structures overlapping the plurality of vertical channel structures in the first direction.