公开(公告)号：US20230086367A1

公开(公告)日：2023-03-23

申请号：US17731464

申请日：2022-04-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jisu Yu ,  Youngsook Do ,  Eunsung Seo ,  Wooseok Kim ,  Wonsik Yu ,  Chanyoung Jeong

IPC: H01L23/528 ,  H01L23/522

Abstract: A semiconductor device includes: a standard cell array including a plurality of standard cells, each of the plurality of standard cells; a plurality of power supply lines configured to provide a power supply voltage and extending in a first direction; a capacitor structure including electrode structures included in each of a plurality of dielectric layers formed on the standard cell array, the capacitor structure having vias connecting the electrode structures; and contacts electrically connecting the capacitor structure and the standard cell array to each other. Each of the plurality of standard cells provides a unit capacitor circuit having capacitance that is based on a connection structure of active regions and gates of first and second transistors thereof.