公开(公告)号：US10176029B2

公开(公告)日：2019-01-08

申请号：US15081128

申请日：2016-03-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinhwan Choi ,  Younwon Park ,  Jeong-Woo Park ,  Youngmoon Kim

IPC: G06F11/00 ,  G06F11/07 ,  G06F13/00 ,  H04L29/08

Abstract: An operation method is for a storage device that includes a storing unit storing a plurality of error logs and a physical layer and exchanges an electrical signal with a host via the physical layer. The operation method includes receiving a debugging command from the host, setting a first value at a first attribute included in the physical layer in response to the debugging command, setting a second value different from the first value at the first attribute in response to a control of the host, setting one among the plurality of error logs at a second attribute based on the first attribute at which the second value is set, and transmitting the error log set at the second attribute to the host in response to a control of the host.

公开(公告)号：US10037160B2

公开(公告)日：2018-07-31

申请号：US14965521

申请日：2015-12-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chun-Um Kong ,  Kyu-Hyung Kim ,  Younwon Park

IPC: G06F3/06 ,  G06F12/02

CPC classification number: G06F3/0631 ,  G06F3/0604 ,  G06F3/0616 ,  G06F3/064 ,  G06F3/0679 ,  G06F12/0246 ,  G06F2212/1032 ,  G06F2212/7201 ,  G06F2212/7211

Abstract: A storage device includes a nonvolatile memory device including memory blocks divided into a first memory area and a second memory area; and a memory controller. In the case of programming specific attribute data, the memory controller determines a memory area in which the specific attribute data will be programmed according to a wear out ratio of the first memory area and a wear out ratio of the second memory area. The wear out ratio is a ratio of the current maximum erase count of memory blocks of a memory area with respect to the allowable maximum erase count of the memory area.

公开(公告)号：US20170192902A1

公开(公告)日：2017-07-06

申请号：US15392353

申请日：2016-12-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： JooYoung HWANG ,  Dong-Min Kim ,  Younwon Park ,  Songho Yoon

IPC: G06F12/10

CPC classification number: G06F12/0246 ,  G06F12/1027 ,  G06F2212/7201 ,  G06F2212/7202

Abstract: An operating method of a storage device that includes a nonvolatile memory device and a controller configured to control the nonvolatile memory device includes sending map data from the storage device to a host device, the map data mapping one or more of a plurality of physical addresses of the nonvolatile memory device to one or more of a plurality of logical addresses of the host device; receiving, at the storage device, a read request from the host device; if the read request includes a physical address, reading data from the nonvolatile memory device based on the included physical address; and if the read request does not include a physical address, translating a logical address of the read request into a first physical address, and reading data from the nonvolatile memory device based on the translated first physical address.

公开(公告)号：US10599341B2

公开(公告)日：2020-03-24

申请号：US15168234

申请日：2016-05-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeong-Woo Park ,  Younwon Park

IPC: G06F3/06

Abstract: A storage device comprising: at least one nonvolatile memory; a buffer; and a memory controller configured to: receive data from a host; store the data in the buffer; and flush the data in the buffer to the at least one nonvolatile memory in response to an absence of communication with the host for a reference time duration.

公开(公告)号：US10229051B2

公开(公告)日：2019-03-12

申请号：US15392353

申请日：2016-12-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： JooYoung Hwang ,  Dong-Min Kim ,  Younwon Park ,  Songho Yoon

IPC: G06F12/1027 ,  G06F12/02

Abstract: An operating method of a storage device that includes a nonvolatile memory device and a controller configured to control the nonvolatile memory device includes sending map data from the storage device to a host device, the map data mapping one or more of a plurality of physical addresses of the nonvolatile memory device to one or more of a plurality of logical addresses of the host device; receiving, at the storage device, a read request from the host device; if the read request includes a physical address, reading data from the nonvolatile memory device based on the included physical address; and if the read request does not include a physical address, translating a logical address of the read request into a first physical address, and reading data from the nonvolatile memory device based on the translated first physical address.

公开(公告)号：US09645918B2

公开(公告)日：2017-05-09

申请号：US13974627

申请日：2013-08-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun-Sik Yun ,  Younwon Park ,  Byung-Ki Lee ,  Do-Sam Kim

IPC: G06F12/00 ,  G06F12/02

CPC classification number: G06F12/0246

Abstract: Storage devices including a flash memory and a memory controller, and write memory block allocating methods of the storage devices are provided. A write memory block allocating method may include storing a pre-allocation table in a Random Access Memory (RAM) of a memory controller. The pre-allocation table may include allocation order information of a pre-allocated memory block included in a flash memory. The method may also include receiving a write request from a host, determining whether a write memory block for the write request can be allocated according to the pre-allocation table and allocating the pre-allocated memory block as the write memory block according to the pre-allocation table when the write memory block can be allocated according to the pre-allocation table.

公开(公告)号：US20140059275A1

公开(公告)日：2014-02-27

申请号：US13974627

申请日：2013-08-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun-Sik Yun ,  Younwon Park ,  Byung-Ki Lee ,  Do-Sam Kim

IPC: G06F12/02

CPC classification number: G06F12/0246

Abstract: Storage devices including a flash memory and a memory controller, and write memory block allocating methods of the storage devices are provided. A write memory block allocating method may include storing a pre-allocation table in a Random Access Memory (RAM) of a memory controller. The pre-allocation table may include allocation order information of a pre-allocated memory block included in a flash memory. The method may also include receiving a write request from a host, determining whether a write memory block for the write request can be allocated according to the pre-allocation table and allocating the pre-allocated memory block as the write memory block according to the pre-allocation table when the write memory block can be allocated according to the pre-allocation table.

Abstract translation: 提供了包括闪存和存储器控制器的存储设备以及存储设备的写入存储器块分配方法。 写存储器块分配方法可以包括将预分配表存储在存储器控制器的随机存取存储器（RAM）中。 预分配表可以包括闪存中包括的预分配存储块的分配顺序信息。 该方法还可以包括从主机接收写请求，确定是否可以根据预分配表分配用于写请求的写存储块，并根据预先分配预分配存储块作为写存储块 分配表时可以根据预分配表分配写入内存块。