公开(公告)号：US20230345705A1

公开(公告)日：2023-10-26

申请号：US18215301

申请日：2023-06-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyooho JUNG ,  Yukyung SHIN ,  Jinho LEE

IPC: H10B12/00

CPC classification number: H10B12/315 ,  H10B12/033 ,  H10B12/34

Abstract: A semiconductor device including a substrate; bottom electrodes on the substrate, each bottom electrode including a first region and a second region, the second region containing an additional element relative to the first region; a first supporting pattern on the substrate and in contact with a portion of a side surface of each bottom electrode; a top electrode on the bottom electrodes; a dielectric layer between the bottom electrodes and the top electrode; and a capping layer between the bottom electrodes and the dielectric layer, the capping layer covering a top surface and a bottom surface of the first supporting pattern, wherein the second region is in contact with the capping layer, and the capping layer and the dielectric layer include different materials from each other.

公开(公告)号：US20220085010A1

公开(公告)日：2022-03-17

申请号：US17361418

申请日：2021-06-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyooho JUNG ,  Young-Lim PARK ,  Changmu AN ,  Hongseon SONG ,  Yukyung SHIN

IPC: H01L27/08 ,  H01L49/02

Abstract: Disclosed are semiconductor devices and fabrication methods for the same. The semiconductor devices may include a bottom electrode, a dielectric layer, and a top electrode that are sequentially stacked on a semiconductor substrate. The bottom electrode includes a first doping region in contact with the dielectric layer, a main region spaced apart from the dielectric layer by the first doping region intervening therebetween, and a second doping region between the first doping region and the main region. Each of the first and second doping regions includes oxygen and a doping metal. In some embodiments, the second doping region may include nitrogen. The main region may be devoid of the doping metal. An amount of oxygen in the second doping region is less than an amount of oxygen in the first doping region.

公开(公告)号：US20230005922A1

公开(公告)日：2023-01-05

申请号：US17571935

申请日：2022-01-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyooho JUNG ,  Yukyung SHIN ,  Jinho LEE

IPC: H01L27/108

Abstract: A semiconductor device including a substrate; bottom electrodes on the substrate, each bottom electrode including a first region and a second region, the second region containing an additional element relative to the first region; a first supporting pattern on the substrate and in contact with a portion of a side surface of each bottom electrode; a top electrode on the bottom electrodes; a dielectric layer between the bottom electrodes and the top electrode; and a capping layer between the bottom electrodes and the dielectric layer, the capping layer covering a top surface and a bottom surface of the first supporting pattern, wherein the second region is in contact with the capping layer, and the capping layer and the dielectric layer include different materials from each other.