公开(公告)号：US09054067B2

公开(公告)日：2015-06-09

申请号：US14095376

申请日：2013-12-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yun-Hyoek Im ,  Kyol Park ,  Hee-Seok Lee

IPC: H01L23/367 ,  H01L23/373 ,  H01L23/31 ,  H01L23/427

CPC classification number: H01L23/3733 ,  H01L23/3128 ,  H01L23/3736 ,  H01L23/4275 ,  H01L2224/16225 ,  H01L2924/15311

Abstract: A semiconductor package and a method of manufacturing the same are disclosed, wherein the semiconductor package includes a circuit board, a semiconductor chip mounted on the circuit board, an encapsulant positioned on the circuit board and encapsulating the semiconductor chip to the circuit board, and a thermal dissipating member positioned on the encapsulant and having a heat spreader that dissipates a driving heat from the semiconductor chip and a heat capacitor that absorbs excess driving heat that exceeds a heat transfer capability of the heat spreader, such that when a high power is applied to the package, the excess heat is absorbed into the heat capacitor as a latent heat and thus the semiconductor chip is protected from an excessive temperature increase caused by the excess heat, thereby increasing a critical time and performance duration time of the semiconductor package.

Abstract translation: 公开了一种半导体封装及其制造方法，其中半导体封装包括电路板，安装在电路板上的半导体芯片，位于电路板上的密封剂，并将半导体芯片封装在电路板上，以及 散热构件位于密封剂上并具有从半导体芯片散发驱动热量的散热器和吸收超过散热器的传热能力的过量驱动热的热电容器，使得当将高功率施加到 该封装中，多余的热量作为潜热被吸收到热电容器中，因此保护半导体芯片免受由于过量的热量引起的过度的温度升高，从而增加半导体封装的临界时间和性能持续时间。