公开(公告)号：US12057366B2

公开(公告)日：2024-08-06

申请号：US18178170

申请日：2023-03-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji Hwang Kim ,  Jong Bo Shim ,  Jang Woo Lee ,  Yung Cheol Kong ,  Young Hoon Hyun

IPC: H01L23/367 ,  H01L23/00 ,  H01L23/31

CPC classification number: H01L23/367 ,  H01L23/3157 ,  H01L24/08 ,  H01L24/48 ,  H01L2224/02371

Abstract: A semiconductor includes a lower structure, an upper structure on the lower structure, and a connection pattern between the lower structure and the upper structure. The connection pattern is configured to electrically connect the lower structure and the upper structure to each other. The lower structure includes a lower base and a first lower chip on the lower base. The first lower chip includes a chip bonding pad, a pad structure, and a heat sink structure. The connection pattern is connected to the upper structure and extends away from the upper structure to be connected to the pad structure. The pad structure has a thickness greater than a thickness of the chip bonding pad. At least a portion of the heat sink structure is at a same height level as at least a portion of the pad structure.

公开(公告)号：US20230207416A1

公开(公告)日：2023-06-29

申请号：US18178170

申请日：2023-03-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji Hwang KIM ,  Jong Bo Shim ,  Jang Woo Lee ,  Yung Cheol Kong ,  Young Hoon Hyun

IPC: H01L23/367 ,  H01L23/31 ,  H01L23/00

CPC classification number: H01L23/367 ,  H01L23/3157 ,  H01L24/08 ,  H01L24/48 ,  H01L2224/02371

Abstract: A semiconductor includes a lower structure, an upper structure on the lower structure, and a connection pattern between the lower structure and the upper structure. The connection pattern is configured to electrically connect the lower structure and the upper structure to each other. The lower structure includes a lower base and a first lower chip on the lower base. The first lower chip includes a chip bonding pad, a pad structure, and a heat sink structure. The connection pattern is connected to the upper structure and extends away from the upper structure to be connected to the pad structure. The pad structure has a thickness greater than a thickness of the chip bonding pad. At least a portion of the heat sink structure is at a same height level as at least a portion of the pad structure.

公开(公告)号：US11600545B2

公开(公告)日：2023-03-07

申请号：US17376570

申请日：2021-07-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji Hwang Kim ,  Jong Bo Shim ,  Jang Woo Lee ,  Yung Cheol Kong ,  Young Hoon Hyun

IPC: H01L23/367 ,  H01L23/31 ,  H01L23/00

Abstract: A semiconductor includes a lower structure, an upper structure on the lower structure, and a connection pattern between the lower structure and the upper structure. The connection pattern is configured to electrically connect the lower structure and the upper structure to each other. The lower structure includes a lower base and a first lower chip on the lower base. The first lower chip includes a chip bonding pad, a pad structure, and a heat sink structure. The connection pattern is connected to the upper structure and extends away from the upper structure to be connected to the pad structure. The pad structure has a thickness greater than a thickness of the chip bonding pad. At least a portion of the heat sink structure is at a same height level as at least a portion of the pad structure.

公开(公告)号：US11069592B2

公开(公告)日：2021-07-20

申请号：US16582418

申请日：2019-09-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji Hwang Kim ,  Jong Bo Shim ,  Jang Woo Lee ,  Yung Cheol Kong ,  Young Hoon Hyun

IPC: H01L23/367 ,  H01L23/31 ,  H01L23/00

Abstract: A semiconductor includes a lower structure, an upper structure on the lower structure, and a connection pattern between the lower structure and the upper structure. The connection pattern is configured to electrically connect the lower structure and the upper structure to each other. The lower structure includes a lower base and a first lower chip on the lower base. The first lower chip includes a chip bonding pad, a pad structure, and a heat sink structure. The connection pattern is connected to the upper structure and extends away from the upper structure to be connected to the pad structure. The pad structure has a thickness greater than a thickness of the chip bonding pad. At least a portion of the heat sink structure is at a same height level as at least a portion of the pad structure.