公开(公告)号：US20190378574A1

公开(公告)日：2019-12-12

申请号：US16401877

申请日：2019-05-02

申请人： Samsung Electronics Co., Ltd.

发明人： Ji-Young LEE ,  Young-sik Rho ,  ll-han Park

IPC分类号： G11C16/14 ,  G11C16/04 ,  G11C16/34 ,  G11C16/10

摘要： Provided are a non-volatile memory device and an erasing method thereof. The erasing method of the non-volatile memory device including a plurality of cell strings in which memory cells and selection transistors are connected, includes: performing a first erase operation based on an erase voltage provided to a first electrode of at least one of the selection transistors and an erase control voltage provided to a second electrode of the at least one of the selection transistors; determining whether there are slow erase cells by performing a multiple erase verify operation based on first and second verify voltages, the second verify voltage being higher than the first verify voltage; adjusting, when there are slow erase cells, the erase control voltage such that a voltage difference between the erase voltage and the erase control voltage increases; and performing a second erase operation based on the adjusted erase control voltage.