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公开(公告)号：US11133179B2
公开(公告)日：2021-09-28
申请号：US16697774
申请日：2019-11-27
发明人： Kiyoung Lee , Woojin Lee , Myoungho Jeong , Yongsung Kim , Eunsun Kim , Hyosik Mun , Jooho Lee , Changseung Lee , Kyuho Cho , Darrell G. Schlom , Craig J. Fennie , Natalie M. Dawley , Gerhard H. Olsen , Zhe Wang
摘要： A thin-film structure includes a support layer and a dielectric layer on the support layer. The support layer includes a material having a lattice constant. The dielectric layer includes a compound having a Ruddlesden-Popper phase (An+1BnX3n+1). where A and B each independently include a cation, X is an anion, and n is a natural number. The lattice constant of the material of the support layer may be less than a lattice constant of the compound.
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公开(公告)号：US11749713B2
公开(公告)日：2023-09-05
申请号：US17851836
申请日：2022-06-28
发明人： Jeongil Bang , Seungwoo Jang , Hyosik Mun , Younggeun Park , Jooho Lee
CPC分类号： H01L28/60 , H01L28/56 , H10B53/30 , H01L21/02197 , H01L21/02266
摘要： A capacitor includes a lower electrode, a first dielectric layer provided on the lower electrode including a perovskite structure, an upper electrode including a perovskite structure, a first dielectric layer between provided on the lower electrode and the upper electrode; and a second dielectric layer, having a band gap energy greater than that of the first dielectric layer, provided between on the first dielectric layer and the upper electrode, the capacitor may have a low leakage current density and stable crystallinity, thereby suppressing a decrease in a dielectric constant.
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公开(公告)号：US10854709B2
公开(公告)日：2020-12-01
申请号：US16392097
申请日：2019-04-23
发明人： Kyooho Jung , Sangyeol Kang , Kyuho Cho , Eunsun Kim , Hyosik Mun
摘要： A method of manufacturing a semiconductor device includes forming a first electrode, forming a preliminary dielectric layer on the first electrode, forming a second electrode on the preliminary dielectric layer, and at least partially phase-changing the preliminary dielectric layer to form a dielectric layer. An interfacial energy between the first electrode and the dielectric layer may be less than an interfacial energy between the first electrode and the preliminary dielectric layer.
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公开(公告)号：US11749714B2
公开(公告)日：2023-09-05
申请号：US17853290
申请日：2022-06-29
发明人： Jeongil Bang , Seungwoo Jang , Hyosik Mun , Younggeun Park , Jooho Lee
CPC分类号： H01L28/60 , H01L28/56 , H10B53/30 , H01L21/02197 , H01L21/02266
摘要： A capacitor includes a lower electrode, a first dielectric layer provided on the lower electrode including a perovskite structure, an upper electrode including a perovskite structure, a first dielectric layer between provided on the lower electrode and the upper electrode; and a second dielectric layer, having a band gap energy greater than that of the first dielectric layer, provided between on the first dielectric layer and the upper electrode, the capacitor may have a low leakage current density and stable crystallinity, thereby suppressing a decrease in a dielectric constant.
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公开(公告)号：US11417724B2
公开(公告)日：2022-08-16
申请号：US17096239
申请日：2020-11-12
发明人： Jeongil Bang , Seungwoo Jang , Hyosik Mun , Younggeun Park , Jooho Lee
IPC分类号： H01L21/00 , H01L49/02 , H01L27/11507 , H01L21/02
摘要： A capacitor includes a lower electrode, a first dielectric layer provided on the lower electrode including a perovskite structure, an upper electrode including a perovskite structure, a first dielectric layer between provided on the lower electrode and the upper electrode; and a second dielectric layer, having a band gap energy greater than that of the first dielectric layer, provided between on the first dielectric layer and the upper electrode, the capacitor may have a low leakage current density and stable crystallinity, thereby suppressing a decrease in a dielectric constant.
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