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公开(公告)号：US11708633B2
公开(公告)日：2023-07-25
申请号：US16861614
申请日：2020-04-29
发明人： Kyung-Eun Byun , Hyoungsub Kim , Taejin Park , Hyeonjin Shin , Hoijoon Kim , Wonsik Ahn , Mirine Leem
IPC分类号： C23C16/30 , B22F7/00 , C23C16/46 , C23C16/448 , C23C16/455 , H01L21/02 , H01L21/285 , H01L31/032
CPC分类号： C23C16/305 , B22F7/008 , C23C16/448 , C23C16/45502 , C23C16/45514 , C23C16/46 , H01L21/02568 , H01L21/02581 , H01L21/28568 , H01L31/0324 , B22F2207/01 , B22F2302/45
摘要： Provided are a metal chalcogenide thin film and a method and device for manufacturing the same. The metal chalcogenide thin film includes a transition metal element and a chalcogen element, and at least one of the transition metal element and the chalcogen element having a composition gradient along the surface of the metal chalcogenide thin film, the composition gradient being an in-plane composition gradient. The metal chalcogenide thin film may be prepared by using a manufacturing method including providing a transition metal precursor and a chalcogen precursor on a substrate by using a confined reaction space in such a manner that at least one of the transition metal precursor and the chalcogen precursor forms a concentration gradient according to a position on the surface of the substrate; and heat-treating the substrate.
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公开(公告)号：US11881399B2
公开(公告)日：2024-01-23
申请号：US17949418
申请日：2022-09-21
发明人： Kyung-Eun Byun , Hyoungsub Kim , Taejin Park , Hoijoon Kim , Hyeonjin Shin , Wonsik Ahn , Mirine Leem , Yeonchoo Cho
IPC分类号： H01L21/02
CPC分类号： H01L21/02568 , H01L21/0262 , H01L21/02491 , H01L21/02658
摘要： A method of forming a transition metal dichalcogenide thin film on a substrate includes treating the substrate with a metal organic material and providing a transition metal precursor and a chalcogen precursor around the substrate to synthesize transition metal dichalcogenide on the substrate. The transition metal precursor may include a transition metal element and the chalcogen precursor may include a chalcogen element.
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公开(公告)号：US12077853B2
公开(公告)日：2024-09-03
申请号：US17132111
申请日：2020-12-23
发明人： Hyangsook Lee , Hyoungsub Kim , Wonsik Ahn , Eunha Lee
IPC分类号： C23C16/30 , C23C16/02 , C23C16/455 , H01L21/02 , H01L21/285
CPC分类号： C23C16/305 , C23C16/0281 , C23C16/45527 , C23C16/45553 , H01L21/02568 , H01L21/28568
摘要： Provided are a method of growing a two-dimensional transition metal chalcogenide (TMC) film and a method of manufacturing a device including the two-dimensional TMC film. The method of growing a two-dimensional TMC film includes placing a metal layer having a predetermined pattern on a surface of a substrate; separately supplying a chalcogen precursor to a reaction chamber provided with the substrate; supplying a transition metal precursor to the reaction chamber; and evacuating the chalcogen precursor, the transition metal precursor, and by-products generated therefrom from the reaction chamber, wherein an amount of the chalcogen precursor and an amount of the transition metal precursor supplied to the reaction chamber may be controlled.
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公开(公告)号：US11476117B2
公开(公告)日：2022-10-18
申请号：US16928560
申请日：2020-07-14
发明人： Kyung-Eun Byun , Hyoungsub Kim , Taejin Park , Hoijoon Kim , Hyeonjin Shin , Wonsik Ahn , Mirine Leem , Yeonchoo Cho
IPC分类号： H01L21/02
摘要： A method of forming a transition metal dichalcogenide thin film on a substrate includes treating the substrate with a metal organic material and providing a transition metal precursor and a chalcogen precursor around the substrate to synthesize transition metal dichalcogenide on the substrate. The transition metal precursor may include a transition metal element and the chalcogen precursor may include a chalcogen element.
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