-
公开(公告)号：US11881399B2
公开(公告)日：2024-01-23
申请号：US17949418
申请日：2022-09-21
发明人： Kyung-Eun Byun , Hyoungsub Kim , Taejin Park , Hoijoon Kim , Hyeonjin Shin , Wonsik Ahn , Mirine Leem , Yeonchoo Cho
IPC分类号： H01L21/02
CPC分类号： H01L21/02568 , H01L21/0262 , H01L21/02491 , H01L21/02658
摘要： A method of forming a transition metal dichalcogenide thin film on a substrate includes treating the substrate with a metal organic material and providing a transition metal precursor and a chalcogen precursor around the substrate to synthesize transition metal dichalcogenide on the substrate. The transition metal precursor may include a transition metal element and the chalcogen precursor may include a chalcogen element.
-
公开(公告)号：US11476117B2
公开(公告)日：2022-10-18
申请号：US16928560
申请日：2020-07-14
发明人： Kyung-Eun Byun , Hyoungsub Kim , Taejin Park , Hoijoon Kim , Hyeonjin Shin , Wonsik Ahn , Mirine Leem , Yeonchoo Cho
IPC分类号： H01L21/02
摘要： A method of forming a transition metal dichalcogenide thin film on a substrate includes treating the substrate with a metal organic material and providing a transition metal precursor and a chalcogen precursor around the substrate to synthesize transition metal dichalcogenide on the substrate. The transition metal precursor may include a transition metal element and the chalcogen precursor may include a chalcogen element.
-
公开(公告)号：US20200208279A1
公开(公告)日：2020-07-02
申请号：US16545927
申请日：2019-08-20
发明人： Taejin Park , Jinbum Kim , Hyoungsub Kim
摘要： Disclosed herein are devices for hydrogen production and methods of fabricating hydrogen catalyst layers. The method may comprise forming on a substrate a first horizontal crystal and a first standing crystal that include each molybdenum oxide; forming a second horizontal crystal, a second standing crystal, and a preliminary layer on the second horizontal and standing crystals by supplying a sulfur gas onto the first horizontal crystal and the first standing crystal, the preliminary layer including molybdenum disulfide (MoS2); and removing the second horizontal crystal and the second standing crystal.
-
公开(公告)号：US11708633B2
公开(公告)日：2023-07-25
申请号：US16861614
申请日：2020-04-29
发明人： Kyung-Eun Byun , Hyoungsub Kim , Taejin Park , Hyeonjin Shin , Hoijoon Kim , Wonsik Ahn , Mirine Leem
IPC分类号： C23C16/30 , B22F7/00 , C23C16/46 , C23C16/448 , C23C16/455 , H01L21/02 , H01L21/285 , H01L31/032
CPC分类号： C23C16/305 , B22F7/008 , C23C16/448 , C23C16/45502 , C23C16/45514 , C23C16/46 , H01L21/02568 , H01L21/02581 , H01L21/28568 , H01L31/0324 , B22F2207/01 , B22F2302/45
摘要： Provided are a metal chalcogenide thin film and a method and device for manufacturing the same. The metal chalcogenide thin film includes a transition metal element and a chalcogen element, and at least one of the transition metal element and the chalcogen element having a composition gradient along the surface of the metal chalcogenide thin film, the composition gradient being an in-plane composition gradient. The metal chalcogenide thin film may be prepared by using a manufacturing method including providing a transition metal precursor and a chalcogen precursor on a substrate by using a confined reaction space in such a manner that at least one of the transition metal precursor and the chalcogen precursor forms a concentration gradient according to a position on the surface of the substrate; and heat-treating the substrate.
-
公开(公告)号：US20240349491A1
公开(公告)日：2024-10-17
申请号：US18534400
申请日：2023-12-08
发明人： Myeong-Dong Lee , Jongmin Kim , Taejin Park , Seung-Bo Ko , Hui-Jung Kim
IPC分类号： H10B12/00
CPC分类号： H10B12/485 , H10B12/482 , H10B12/488
摘要： An example semiconductor memory device includes first and second active patterns, which are extended in a first direction and are disposed side by side in a second direction. Each of the first and second active patterns includes first and second edge portions, which are spaced apart from each other in the first direction. A pair of word lines are disposed to cross each of the first and second active patterns, a pair of bit lines are disposed on each of the first and second active patterns and are extended in a third direction, and a storage node contacts on the first edge portion of the first active pattern. When measured in the second direction, a first width of the storage node contact at a first level is larger than a second width at a second level. The first level is lower than the second level.
-
公开(公告)号：US11889681B2
公开(公告)日：2024-01-30
申请号：US17720664
申请日：2022-04-14
发明人： Taejin Park , Taehoon Kim , Kyujin Kim , Chulkwon Park , Sunghee Han , Yoosang Hwang
IPC分类号： H10B12/00
CPC分类号： H10B12/34 , H10B12/053 , H10B12/315 , H10B12/482
摘要： An integrated circuit device includes a substrate having an active region and a word line trench therein. The word line trench includes a lower portion having a first width, and an upper portion, which extends between the lower portion and a surface of the substrate and has a second width that is greater than the first width. A word line is provided, which extends in and adjacent a bottom of the word line trench. A gate insulation layer is provided, which extends between the word line and sidewalls of the lower portion of the word line trench. An electrically insulating gate capping layer is provided in the upper portion of the word line trench. An insulation liner is provided, which extends between the gate capping layer and sidewalls of the upper portion of the word line trench. The gate insulation layer extends between the insulation liner and a portion of the gate capping layer, which extends within the upper portion of the word line trench.
-
7.发明授权公开(公告)号：US11282787B2
公开(公告)日：2022-03-22
申请号：US16879009
申请日：2020-05-20
发明人： Taejin Park , Keunnam Kim , Sohyun Park , Jin-Hwan Chun , Wooyoung Choi , Sunghee Han , Inkyoung Heo , Yoosang Hwang
IPC分类号： H01L29/40 , H01L23/48 , H01L23/52 , H01L23/528 , H01L29/06 , G11C5/10 , H01L29/423 , H01L27/108 , H01L21/768
摘要： The semiconductor device provided comprises a substrate that includes active regions that extends in a first direction and a device isolation layer that defines the active regions, word lines that run across the active regions in a second direction that intersects the first direction, bit-line structures that intersect the active regions and the word lines and that extend in a third direction that is perpendicular to the second direction, first contacts between the bit-line structures and the active regions, spacer structures on sidewalls of the bit-line structures, and second contacts that are between adjacent bit-line structures and are connected to the active regions. Each of the spacer structures extends from the sidewalls of the bit-line structures onto a sidewall of the device isolation layer.
-
公开(公告)号：US10269808B2
公开(公告)日：2019-04-23
申请号：US15584342
申请日：2017-05-02
发明人： Daeik Kim , Bong-Soo Kim , Jemin Park , Taejin Park , Yoosang Hwang
IPC分类号： H01L27/108
摘要： Semiconductor devices are provided. A semiconductor device includes a substrate. The semiconductor device includes a stack structure on the substrate. The stack structure includes a first insulating material and a second insulating material that is on the first insulating material. The semiconductor device includes a spacer that extends from a sidewall of the first insulating material of the stack structure to a portion of a sidewall of the second insulating material of the stack structure. Moreover, the semiconductor device includes a conductive line that is on the spacer. Methods of forming semiconductor devices are also provided.
-
公开(公告)号：US12069849B2
公开(公告)日：2024-08-20
申请号：US18124043
申请日：2023-03-21
发明人： Daeik Kim , Bong-Soo Kim , Jemin Park , Taejin Park , Yoosang Hwang
IPC分类号： H10B12/00 , H01L21/3213 , H01L21/768 , H01L21/8234 , H01L29/66
CPC分类号： H10B12/482 , H01L21/3213 , H01L21/76829 , H01L21/76838 , H01L21/823468 , H01L29/6656 , H10B12/033 , H10B12/053 , H10B12/31 , H10B12/315 , H10B12/34
摘要： Semiconductor devices are provided. A semiconductor device includes a substrate. The semiconductor device includes a stack structure on the substrate. The stack structure includes a first insulating material and a second insulating material that is on the first insulating material. The semiconductor device includes a spacer that extends from a sidewall of the first insulating material of the stack structure to a portion of a sidewall of the second insulating material of the stack structure. Moreover, the semiconductor device includes a conductive line that is on the spacer. Methods of forming semiconductor devices are also provided.
-
公开(公告)号：US20240224507A1
公开(公告)日：2024-07-04
申请号：US18541625
申请日：2023-12-15
发明人： Jongmin Kim , Taejin Park , Chansic Yoon , Kiseok Lee , Hongjun Lee
IPC分类号： H10B12/00 , H01L29/417 , H01L29/423
CPC分类号： H10B12/34 , H01L29/41741 , H01L29/4236 , H10B12/315
摘要： A semiconductor device includes an active pattern on a substrate, a gate structure, a conductive filling pattern and a bit line structure on the conductive filling pattern. The gate structure extends through an upper portion of the active pattern, and has an upper surface higher than an upper surface of the active pattern. The conductive filling pattern includes a lower portion on the active pattern and an upper portion thereon. The lower portion contacts an upper sidewall of the gate structure, and the upper portion has a width greater than a width of the lower portion.
-
-
-
-
-
-
-
-
-
搜索结果
36 条记录 (耗时 0.027 秒)
