公开(公告)号：US20190198323A1

公开(公告)日：2019-06-27

申请号：US16027692

申请日：2018-07-05

Applicant: Samsung Electronics Co. Ltd.

Inventor： Jung Han Lee ,  Byoung-gi Kim ,  Jong Pil Kim ,  Kihwan Lee

IPC: H01L21/225 ,  H01L21/02 ,  H01L21/8238 ,  H01L21/762 ,  H01L23/532

Abstract: A method for manufacturing a semiconductor device includes performing a first ion implantation process on a substrate to form a lower dopant region in the substrate, patterning the substrate having the lower dopant region to form active patterns, and performing a second ion implantation process on the active patterns to form an upper dopant region in an upper portion of each of the active patterns. The lower and upper dopant regions have a same conductivity type.

公开(公告)号：US20220336451A1

公开(公告)日：2022-10-20

申请号：US17856157

申请日：2022-07-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： JUNGHAN LEE ,  Taeyong Kwon ,  Minchul Sun ,  Byounggi Kim ,  Suhyeon Park ,  Kihwan Lee

IPC: H01L27/088 ,  H01L29/78 ,  H01L21/8234 ,  H01L29/66

Abstract: A semiconductor device may include a substrate including first regions and a second region between the first regions. Active fins may protrude from the substrate in the first regions. Each of the active fins may extend in a first direction parallel to an upper surface of the substrate. The active fins may be regularly arranged and spaced apart from each other in a second direction. First trenches may be at both edges of the second region. A protrusion may be between the first trenches. An upper surface of the protrusion may be lower than a bottom of the active fins. A first width in the second direction of one of the first trenches may be greater than 0.7 times a first pitch of the active fins that is a sum of a width of one of the active fins and a distance between adjacent ones of the active fins.

公开(公告)号：US11107686B2

公开(公告)日：2021-08-31

申请号：US16720878

申请日：2019-12-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Han Lee ,  Byoung-gi Kim ,  Jong Pil Kim ,  Kihwan Lee

IPC: H01L21/225 ,  H01L21/02 ,  H01L21/8238 ,  H01L23/532 ,  H01L21/762

Abstract: A method for manufacturing a semiconductor device includes performing a first ion implantation process on a substrate to form a lower dopant region in the substrate, patterning the substrate having the lower dopant region to form active patterns, and performing a second ion implantation process on the active patterns to form an upper dopant region in an upper portion of each of the active patterns. The lower and upper dopant regions have a same conductivity type.

公开(公告)号：US20210074701A1

公开(公告)日：2021-03-11

申请号：US16855321

申请日：2020-04-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junghan Lee ,  Taeyong Kwon ,  Minchul Sun ,  Byounggi Kim ,  Suhyeon Park ,  Kihwan Lee

IPC: H01L27/088 ,  H01L29/78 ,  H01L29/66 ,  H01L21/8234

Abstract: A semiconductor device may include a substrate including first regions and a second region between the first regions. Active fins may protrude from the substrate in the first regions. Each of the active fins may extend in a first direction parallel to an upper surface of the substrate. The active fins may be regularly arranged and spaced apart from each other in a second direction. First trenches may be at both edges of the second region. A protrusion may be between the first trenches. An upper surface of the protrusion may be lower than a bottom of the active fins. A first width in the second direction of one of the first trenches may be greater than 0.7 times a first pitch of the active fins that is a sum of a width of one of the active fins and a distance between adjacent ones of the active fins.

公开(公告)号：US11410997B2

公开(公告)日：2022-08-09

申请号：US16855321

申请日：2020-04-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junghan Lee ,  Taeyong Kwon ,  Minchul Sun ,  Byounggi Kim ,  Suhyeon Park ,  Kihwan Lee

IPC: H01L27/088 ,  H01L29/78 ,  H01L21/8234 ,  H01L29/66

Abstract: A semiconductor device may include a substrate including first regions and a second region between the first regions. Active fins may protrude from the substrate in the first regions. Each of the active fins may extend in a first direction parallel to an upper surface of the substrate. The active fins may be regularly arranged and spaced apart from each other in a second direction. First trenches may be at both edges of the second region. A protrusion may be between the first trenches. An upper surface of the protrusion may be lower than a bottom of the active fins. A first width in the second direction of one of the first trenches may be greater than 0.7 times a first pitch of the active fins that is a sum of a width of one of the active fins and a distance between adjacent ones of the active fins.

公开(公告)号：US10553434B2

公开(公告)日：2020-02-04

申请号：US16027692

申请日：2018-07-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Han Lee ,  Byoung-gi Kim ,  Jong Pil Kim ,  Kihwan Lee

IPC: H01L21/225 ,  H01L21/02 ,  H01L21/8238 ,  H01L23/532 ,  H01L21/762

Abstract: A method for manufacturing a semiconductor device includes performing a first ion implantation process on a substrate to form a lower dopant region in the substrate, patterning the substrate having the lower dopant region to form active patterns, and performing a second ion implantation process on the active patterns to form an upper dopant region in an upper portion of each of the active patterns. The lower and upper dopant regions have a same conductivity type.