公开(公告)号：US20160086841A1

公开(公告)日：2016-03-24

申请号：US14711394

申请日：2015-05-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SEUNGHYUN SONG ,  Hyeon Kyun Noh ,  Taeyong Kwon ,  Sangsu Kim ,  Shigenobu Maeda ,  Krishna Bhuwalka ,  Uihui Kwon ,  Keunho Lee ,  Wonsok Lee

IPC: H01L21/762 ,  H01L29/10 ,  H01L21/02 ,  H01L29/06 ,  H01L21/308 ,  H01L29/66

CPC classification number: H01L21/76224 ,  H01L21/3086 ,  H01L29/1054 ,  H01L29/165 ,  H01L29/66795 ,  H01L29/7851

Abstract: A method for forming a pattern of a semiconductor device and a semiconductor device formed using the same are provided. The method includes forming a buffer layer on a substrate, forming a channel layer on the buffer layer, forming support patterns penetrating the channel layer, and forming channel fin patterns and a buffer pattern by patterning the channel layer and the buffer layer. The channel layer includes a material of which a lattice constant is different from that of the buffer layer, and each of the channel fin patterns has both sidewalls that are in contact with the support patterns and are opposite to each other.

Abstract translation: 提供了一种用于形成半导体器件的图案的方法和使用其形成的半导体器件。 该方法包括在衬底上形成缓冲层，在缓冲层上形成沟道层，形成穿透沟道层的支撑图案，并通过图案化沟道层和缓冲层形成沟道鳍图案和缓冲图案。 沟道层包括晶格常数与缓冲层的晶格常数不同的材料，并且每个沟道鳍图案具有与支撑图案接触并且彼此相对的两个侧壁。

公开(公告)号：US11799036B2

公开(公告)日：2023-10-24

申请号：US17370464

申请日：2021-07-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seungmin Song ,  Taeyong Kwon ,  Jaehyeoung Ma ,  Namhyun Lee

IPC: H01L29/786 ,  H01L27/092 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L21/02 ,  H01L21/8238 ,  H01L29/66

CPC classification number: H01L29/78696 ,  H01L21/0259 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823864 ,  H01L21/823871 ,  H01L27/092 ,  H01L29/0665 ,  H01L29/41733 ,  H01L29/42392 ,  H01L29/66545 ,  H01L29/66553 ,  H01L29/66742 ,  H01L29/78618

Abstract: A semiconductor device including a substrate including a division region extending in a first direction, first and second active patterns on the substrate with the division region interposed therebetween, the first and the second active patterns being spaced apart from each other in a second direction perpendicular to the first direction, gate electrodes extending in the first direction and crossing the first and second active patterns, a first channel pattern on the first active pattern, and a second channel pattern on the second active pattern may be provided. The smallest width of the first active pattern may be smaller than the smallest width of the second active pattern, in the first direction. An end portion of the first channel pattern adjacent to the division region may include a protruding portion extending in the first direction, and the protruding portion may have a triangle shape in a plan view.

公开(公告)号：US20210074701A1

公开(公告)日：2021-03-11

申请号：US16855321

申请日：2020-04-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junghan Lee ,  Taeyong Kwon ,  Minchul Sun ,  Byounggi Kim ,  Suhyeon Park ,  Kihwan Lee

IPC: H01L27/088 ,  H01L29/78 ,  H01L29/66 ,  H01L21/8234

Abstract: A semiconductor device may include a substrate including first regions and a second region between the first regions. Active fins may protrude from the substrate in the first regions. Each of the active fins may extend in a first direction parallel to an upper surface of the substrate. The active fins may be regularly arranged and spaced apart from each other in a second direction. First trenches may be at both edges of the second region. A protrusion may be between the first trenches. An upper surface of the protrusion may be lower than a bottom of the active fins. A first width in the second direction of one of the first trenches may be greater than 0.7 times a first pitch of the active fins that is a sum of a width of one of the active fins and a distance between adjacent ones of the active fins.

公开(公告)号：US20220336451A1

公开(公告)日：2022-10-20

申请号：US17856157

申请日：2022-07-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： JUNGHAN LEE ,  Taeyong Kwon ,  Minchul Sun ,  Byounggi Kim ,  Suhyeon Park ,  Kihwan Lee

IPC: H01L27/088 ,  H01L29/78 ,  H01L21/8234 ,  H01L29/66

Abstract: A semiconductor device may include a substrate including first regions and a second region between the first regions. Active fins may protrude from the substrate in the first regions. Each of the active fins may extend in a first direction parallel to an upper surface of the substrate. The active fins may be regularly arranged and spaced apart from each other in a second direction. First trenches may be at both edges of the second region. A protrusion may be between the first trenches. An upper surface of the protrusion may be lower than a bottom of the active fins. A first width in the second direction of one of the first trenches may be greater than 0.7 times a first pitch of the active fins that is a sum of a width of one of the active fins and a distance between adjacent ones of the active fins.

公开(公告)号：US12107172B2

公开(公告)日：2024-10-01

申请号：US18478410

申请日：2023-09-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seungmin Song ,  Taeyong Kwon ,  Jaehyeoung Ma ,  Namhyun Lee

IPC: H01L29/786 ,  H01L21/02 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66

CPC classification number: H01L29/78696 ,  H01L21/0259 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823864 ,  H01L21/823871 ,  H01L27/092 ,  H01L29/0665 ,  H01L29/41733 ,  H01L29/42392 ,  H01L29/66545 ,  H01L29/66553 ,  H01L29/66742 ,  H01L29/78618

Abstract: A semiconductor device including a substrate including a division region extending in a first direction, first and second active patterns on the substrate with the division region interposed therebetween, the first and the second active patterns being spaced apart from each other in a second direction perpendicular to the first direction, gate electrodes extending in the first direction and crossing the first and second active patterns, a first channel pattern on the first active pattern, and a second channel pattern on the second active pattern may be provided. The smallest width of the first active pattern may be smaller than the smallest width of the second active pattern, in the first direction. An end portion of the first channel pattern adjacent to the division region may include a protruding portion extending in the first direction, and the protruding portion may have a triangle shape in a plan view.

公开(公告)号：US20240006411A1

公开(公告)日：2024-01-04

申请号：US18318587

申请日：2023-05-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Taeyong Kwon ,  Yoonjoong Kim ,  Seungmin Kim ,  Dogeon Lee

IPC: H01L27/088 ,  H01L29/06 ,  H01L29/10 ,  H01L29/423 ,  H01L29/775 ,  H01L21/8234 ,  H01L29/66

CPC classification number: H01L27/088 ,  H01L29/0673 ,  H01L29/1033 ,  H01L29/42392 ,  H01L29/775 ,  H01L21/823412 ,  H01L29/66439

Abstract: A semiconductor device may include a plurality of first channel structures on a substrate, a plurality of second channel structures on the substrate, a first impurity region structure between the first channel structures, a second impurity region structure between second channel structures, a third impurity region structure between the first and second channel structures, and a plurality of gate structures disposed between the first to third impurity region structures, respectively.
Each of the first channel structure may have a first width, and each of the second channel structure may have a second width less than the first width. The first impurity region structure may have a first volume, and the second impurity region structure may have a second volume smaller than the first volume. The third impurity region structure may have a third volume smaller than the first volume and greater than the second volume.

公开(公告)号：US11410997B2

公开(公告)日：2022-08-09

申请号：US16855321

申请日：2020-04-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junghan Lee ,  Taeyong Kwon ,  Minchul Sun ,  Byounggi Kim ,  Suhyeon Park ,  Kihwan Lee

IPC: H01L27/088 ,  H01L29/78 ,  H01L21/8234 ,  H01L29/66

Abstract: A semiconductor device may include a substrate including first regions and a second region between the first regions. Active fins may protrude from the substrate in the first regions. Each of the active fins may extend in a first direction parallel to an upper surface of the substrate. The active fins may be regularly arranged and spaced apart from each other in a second direction. First trenches may be at both edges of the second region. A protrusion may be between the first trenches. An upper surface of the protrusion may be lower than a bottom of the active fins. A first width in the second direction of one of the first trenches may be greater than 0.7 times a first pitch of the active fins that is a sum of a width of one of the active fins and a distance between adjacent ones of the active fins.