公开(公告)号：US09785357B2

公开(公告)日：2017-10-10

申请号：US14918050

申请日：2015-10-20

Applicant: SanDisk Technologies Inc.

Inventor： Deepak Raghu ,  Chris Aviala ,  Harish Singidi ,  Guirong Liang ,  Anne Pao-Ling Koh ,  Dana Lee ,  Gautam Dusija

IPC: G06F3/06

CPC classification number: G06F3/061 ,  G06F3/0619 ,  G06F3/0647 ,  G06F3/0679 ,  G11C11/5642 ,  G11C16/26 ,  G11C29/021 ,  G11C29/028

Abstract: Systems and methods for sampling data at a non-volatile memory system are disclosed. In one implementation, a controller of a non-volatile memory system that is coupled with a host device acquires a read level voltage of a first word line of a memory block of a non-volatile memory of the non-volatile memory system. The controller accesses one or more lookup tables to determine an offset voltage for a second word line of the memory block based on a program/erase count and a read/disturb count associated with the memory block; applies the read level voltage and the offset voltage to the second word line to sample data stored at the memory block; and determines whether the data sampled from the memory block contains errors.

公开(公告)号：US20170109040A1

公开(公告)日：2017-04-20

申请号：US14918050

申请日：2015-10-20

Applicant: SanDisk Technologies Inc.

Inventor： Deepak Raghu ,  Chris Aviala ,  Harish Singidi ,  Guirong Liang ,  Anne Pao-LIng Koh ,  Dana Lee ,  Gautam Dusija

IPC: G06F3/06

CPC classification number: G06F3/061 ,  G06F3/0619 ,  G06F3/0647 ,  G06F3/0679 ,  G11C11/5642 ,  G11C16/26 ,  G11C29/021 ,  G11C29/028

Abstract: Systems and methods for sampling data at a non-volatile memory system are disclosed. In one implementation, a controller of a non-volatile memory system that is coupled with a host device acquires a read level voltage of a first word line of a memory block of a non-volatile memory of the non-volatile memory system. The controller accesses one or more lookup tables to determine an offset voltage for a second word line of the memory block based on a program/erase count and a read/disturb count associated with the memory block; applies the read level voltage and the offset voltage to the second word line to sample data stored at the memory block; and determines whether the data sampled from the memory block contains errors.