公开(公告)号：US09785357B2

公开(公告)日：2017-10-10

申请号：US14918050

申请日：2015-10-20

Applicant: SanDisk Technologies Inc.

Inventor： Deepak Raghu ,  Chris Aviala ,  Harish Singidi ,  Guirong Liang ,  Anne Pao-Ling Koh ,  Dana Lee ,  Gautam Dusija

IPC: G06F3/06

CPC classification number: G06F3/061 ,  G06F3/0619 ,  G06F3/0647 ,  G06F3/0679 ,  G11C11/5642 ,  G11C16/26 ,  G11C29/021 ,  G11C29/028

Abstract: Systems and methods for sampling data at a non-volatile memory system are disclosed. In one implementation, a controller of a non-volatile memory system that is coupled with a host device acquires a read level voltage of a first word line of a memory block of a non-volatile memory of the non-volatile memory system. The controller accesses one or more lookup tables to determine an offset voltage for a second word line of the memory block based on a program/erase count and a read/disturb count associated with the memory block; applies the read level voltage and the offset voltage to the second word line to sample data stored at the memory block; and determines whether the data sampled from the memory block contains errors.

公开(公告)号：US20170109040A1

公开(公告)日：2017-04-20

申请号：US14918050

申请日：2015-10-20

Applicant: SanDisk Technologies Inc.

Inventor： Deepak Raghu ,  Chris Aviala ,  Harish Singidi ,  Guirong Liang ,  Anne Pao-LIng Koh ,  Dana Lee ,  Gautam Dusija

IPC: G06F3/06

CPC classification number: G06F3/061 ,  G06F3/0619 ,  G06F3/0647 ,  G06F3/0679 ,  G11C11/5642 ,  G11C16/26 ,  G11C29/021 ,  G11C29/028

Abstract: Systems and methods for sampling data at a non-volatile memory system are disclosed. In one implementation, a controller of a non-volatile memory system that is coupled with a host device acquires a read level voltage of a first word line of a memory block of a non-volatile memory of the non-volatile memory system. The controller accesses one or more lookup tables to determine an offset voltage for a second word line of the memory block based on a program/erase count and a read/disturb count associated with the memory block; applies the read level voltage and the offset voltage to the second word line to sample data stored at the memory block; and determines whether the data sampled from the memory block contains errors.

公开(公告)号：US09646709B2

公开(公告)日：2017-05-09

申请号：US14851141

申请日：2015-09-11

Applicant: SanDisk Technologies Inc.

Inventor： Philip Reusswig ,  Harish Singidi ,  Deepak Raghu ,  Gautam Dusija ,  Pao-Ling Koh ,  Chris Avila

IPC: G11C16/04 ,  G11C16/34 ,  G06F11/10 ,  G11C29/52 ,  G11C16/26 ,  G11C11/56

CPC classification number: G11C16/3431 ,  G06F11/1072 ,  G11C11/5642 ,  G11C16/26 ,  G11C16/3422 ,  G11C16/349 ,  G11C29/52

Abstract: Methods and systems are provided where non-volatile solid state memory may include selected memory cells coupled to a selected word line and proxy memory cells coupled to a proxy word line. The selected memory cells may be non-adjacent to the proxy memory cells and be selected for a read operation. A read proxy voltage may be applied to the proxy word line when data is read from the selected memory cells. A read disturb may be determined based on a difference between a predetermined value stored in the proxy memory cells and a value read from the proxy memory cells.

公开(公告)号：US20170076811A1

公开(公告)日：2017-03-16

申请号：US14851141

申请日：2015-09-11

Applicant: SanDisk Technologies Inc.

Inventor： Philip Reusswig ,  Harish Singidi ,  Deepak Raghu ,  Gautam Dusija ,  Pao-Ling Koh ,  Chris Avila

IPC: G11C16/34 ,  G11C11/56 ,  G11C16/26 ,  G06F11/10 ,  G11C29/52

CPC classification number: G11C16/3431 ,  G06F11/1072 ,  G11C11/5642 ,  G11C16/26 ,  G11C16/3422 ,  G11C16/349 ,  G11C29/52

Abstract: Methods and systems are provided where non-volatile solid state memory may include selected memory cells coupled to a selected word line and proxy memory cells coupled to a proxy word line. The selected memory cells may be non-adjacent to the proxy memory cells and be selected for a read operation. A read proxy voltage may be applied to the proxy word line when data is read from the selected memory cells. A read disturb may be determined based on a difference between a predetermined value stored in the proxy memory cells and a value read from the proxy memory cells.

Abstract translation: 提供了方法和系统，其中非易失性固态存储器可以包括耦合到选定字线的选定存储器单元和耦合到代理字线的代理存储器单元。 所选择的存储器单元可以不与代理存储器单元相邻并且被选择用于读取操作。 当从所选择的存储单元读取数据时，读取代理电压可被施加到代理字线。 可以基于存储在代理存储单元中的预定值和从代理存储单元读取的值之间的差来确定读取干扰。