公开(公告)号：US11475961B1

公开(公告)日：2022-10-18

申请号：US17307396

申请日：2021-05-04

Applicant: SanDisk Technologies LLC

Inventor： Sujjatul Islam ,  Ravi J. Kumar ,  Deepanshu Dutta

IPC: G11C16/34 ,  G11C16/14 ,  G11C16/10 ,  G11C16/30 ,  G11C16/08 ,  G11C16/26

Abstract: An apparatus includes one or more control circuits configured to connect to a plurality of non-volatile memory cells through a plurality of word lines. The one or more control circuits are configured to, for each target word line of a plurality of target word lines to be read, select either a first neighboring word line or a second neighboring word line as a selected neighboring word line according to whether non-volatile memory cells of the first neighboring word line are in an erased condition. The one or more control circuits are further configured to determine a read voltage to read non-volatile memory cells of a corresponding target word line according to an amount of charge in non-volatile memory cells of the selected neighboring word line.

公开(公告)号：US12254218B2

公开(公告)日：2025-03-18

申请号：US18360252

申请日：2023-07-27

Applicant: SanDisk Technologies LLC

Inventor： Md Raquibuzzaman ,  Sujjatul Islam ,  Ravi J. Kumar

IPC: G06F3/06

Abstract: An apparatus includes a control circuit configured connect to non-volatile memory cells. The control circuit is configured to receive a read command directed to data stored in non-volatile memory cells of a first word line and determine that a second word line adjacent to the first word line is sanitized. The control circuit is further configured to select an adjusted read voltage for a read operation directed to the non-volatile memory cells of the first word line based on the determination.

公开(公告)号：US20220359017A1

公开(公告)日：2022-11-10

申请号：US17307396

申请日：2021-05-04

Applicant: SanDisk Technologies LLC

Inventor： Sujjatul Islam ,  Ravi J. Kumar ,  Deepanshu Dutta

IPC: G11C16/14 ,  G11C16/10 ,  G11C16/26 ,  G11C16/08 ,  G11C16/30

Abstract: An apparatus includes one or more control circuits configured to connect to a plurality of non-volatile memory cells through a plurality of word lines. The one or more control circuits are configured to, for each target word line of a plurality of target word lines to be read, select either a first neighboring word line or a second neighboring word line as a selected neighboring word line according to whether non-volatile memory cells of the first neighboring word line are in an erased condition. The one or more control circuits are further configured to determine a read voltage to read non-volatile memory cells of a corresponding target word line according to an amount of charge in non-volatile memory cells of the selected neighboring word line.

公开(公告)号：US20240143229A1

公开(公告)日：2024-05-02

申请号：US18360252

申请日：2023-07-27

Applicant: SanDisk Technologies LLC

Inventor： Md Raquibuzzaman ,  Sujjatul Islam ,  Ravi J. Kumar

IPC: G06F3/06

CPC classification number: G06F3/0659 ,  G06F3/0604 ,  G06F3/0679

Abstract: An apparatus includes a control circuit configured connect to non-volatile memory cells. The control circuit is configured to receive a read command directed to data stored in non-volatile memory cells of a first word line and determine that a second word line adjacent to the first word line is sanitized. The control circuit is further configured to select an adjusted read voltage for a read operation directed to the non-volatile memory cells of the first word line based on the determination.