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公开(公告)号：US20230260583A1
公开(公告)日：2023-08-17
申请号：US17670821
申请日：2022-02-14
Applicant: SanDisk Technologies LLC
Inventor： Xiaojia JIA , Swaroop KAZA , Laidong WANG , Jiacen GUO
CPC classification number: G11C16/3459 , G11C16/3404 , G11C16/102 , G11C16/26 , G11C16/24
Abstract: The present disclosure provides for improving data retention reliability. During a programming operation associated with a memory cell, after the memory cell passes verification of a first verification voltage level, a second verification voltage level can be applied to the memory cell. Based on a comparison of the voltage in the memory cell with the second verification voltage level, a bit line voltage may be applied. Based on the applied bit line voltage, fast bits associated with the memory cell can be upshifted to an upper portion of a final voltage distribution associated with the programming operation. Upshifting the fast bits counteracts the downshifting effect in a final voltage distribution that may be caused by charge leakage or electron loss.
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公开(公告)号：US20230197174A1
公开(公告)日：2023-06-22
申请号：US17556477
申请日：2021-12-20
Applicant: SanDisk Technologies LLC
Inventor： Jiacen GUO , Xiang YANG , Swaroop KAZA , Laidong WANG
CPC classification number: G11C16/3459 , G11C16/3409 , G11C16/102 , G11C16/26 , G11C16/32
Abstract: A memory device with adaptive sense time tables is disclosed. In order to maintain a desired (initial or preset) threshold voltage distribution, the sense time is adjusted as the program-erase cycle count increases. The program-erase cycle process tends to wear down memory cells, causing the QPW window to expand and the threshold voltage to widen. However, by adjusting (i.e., reducing) the sense time for increased program-erase cycles, the QPW window and the threshold voltage can be at least substantially maintained. Additionally, systems and methods for adjusting sense time based on die-to-die variations are also disclosed.
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