公开(公告)号：US10886002B1

公开(公告)日：2021-01-05

申请号：US16440212

申请日：2019-06-13

Applicant: SanDisk Technologies LLC

Inventor： Daniel Linnen ,  Avinash Rajagiri ,  Yuvaraj Krishnamoorthy ,  Srikar Peesari ,  Ashish Ghai ,  Dongxiang Liao

IPC: G11C29/38 ,  G06F13/16 ,  G11C16/04 ,  G11C16/14 ,  G11C29/44

Abstract: A method for detecting defects in a memory system includes receiving a command to perform a standard erase operation on at least one memory cell of the memory system. The method also includes performing a first defect detection operation on the at least one memory cell. The method also includes setting, in response to the first defect detection operation detecting a defect, a defect status indicator. The method also includes performing the standard erase operation on the at least one memory cell. The method also includes performing a second defect detection operation on the at least one memory cell. The method also includes setting, in response to the second defect detection operation detecting a defect, the defect status indicator.