公开(公告)号：US20080017317A1

公开(公告)日：2008-01-24

申请号：US11735549

申请日：2007-04-16

申请人： Sang Jean JEON ,  Chin Wook Chung ,  Guen Suk Lee ,  Seung Yuop Sa ,  Hyung Chul Cho

发明人： Sang Jean JEON ,  Chin Wook Chung ,  Guen Suk Lee ,  Seung Yuop Sa ,  Hyung Chul Cho

IPC分类号： C23F1/00 ,  C23C16/00

CPC分类号： C23C16/507 ,  H01J37/321 ,  H05H1/46

摘要： A substrate processing apparatus. The substrate processing apparatus includes a vacuum chamber having a reaction space to generate plasma in which a target substrate is located, a low frequency antenna unit located outside the reaction space to generate plasma in the reaction space, a low frequency power supply to apply low frequency power to the low frequency antenna unit, a high frequency antenna unit located outside the reaction space to generate plasma in the reaction space, and a high frequency power supply to apply high frequency power to the high frequency antenna unit. The apparatus allows the ignition of plasma to be performed efficiently via the high frequency antenna unit, and improves efficiency of inductive coupling between plasma and a low frequency antenna via the low frequency antenna unit, thereby improving plasma generation efficiency.

摘要翻译： 基板处理装置。 基板处理装置包括具有反应空间以产生目标基板的等离子体的真空室，位于反应空间外侧的低频天线单元，用于在反应空间中产生等离子体;低频电源，以施加低频 低频天线单元的功率，位于反应空间外部的高频天线单元，以在反应空间中产生等离子体;以及高频电源，向高频天线单元施加高频功率。 该装置允许通过高频天线单元有效地执行等离子体的点火，并且通过低频天线单元提高等离子体和低频天线之间的电感耦合的效率，从而提高等离子体产生效率。

公开(公告)号：US08343309B2

公开(公告)日：2013-01-01

申请号：US11735549

申请日：2007-04-16

申请人： Sang Jean Jeon ,  Chin Wook Chung ,  Guen Suk Lee ,  Seung Yuop Sa ,  Hyung Chul Cho

发明人： Sang Jean Jeon ,  Chin Wook Chung ,  Guen Suk Lee ,  Seung Yuop Sa ,  Hyung Chul Cho

IPC分类号： H01L21/306 ,  C23C16/00

CPC分类号： C23C16/507 ,  H01J37/321 ,  H05H1/46

摘要： A substrate processing apparatus. The substrate processing apparatus includes a vacuum chamber having a reaction space to generate plasma in which a target substrate is located, a low frequency antenna unit located outside the reaction space to generate plasma in the reaction space, a low frequency power supply to apply low frequency power to the low frequency antenna unit, a high frequency antenna unit located outside the reaction space to generate plasma in the reaction space, and a high frequency power supply to apply high frequency power to the high frequency antenna unit. The apparatus allows the ignition of plasma to be performed efficiently via the high frequency antenna unit, and improves efficiency of inductive coupling between plasma and a low frequency antenna via the low frequency antenna unit, thereby improving plasma generation efficiency.

摘要翻译： 基板处理装置。 基板处理装置包括具有反应空间以产生目标基板的等离子体的真空室，位于反应空间外侧的低频天线单元，用于在反应空间中产生等离子体;低频电源，以施加低频 低频天线单元的功率，位于反应空间外部的高频天线单元，以在反应空间中产生等离子体;以及高频电源，向高频天线单元施加高频功率。 该装置允许通过高频天线单元有效地执行等离子体的点火，并且通过低频天线单元提高等离子体和低频天线之间的电感耦合的效率，从而提高等离子体产生效率。