Abstract:
Provided is an apparatus for generating remote plasma, which can improve thin-film quality by preventing an arc at a bias electrode. The apparatus includes a radio frequency (RF) electrode installed inside an upper portion of a chamber, a bias electrode installed apart from the RF electrode, and including a plurality of through holes through which plasma passes, wherein a bias power is supplied to the bias electrode, a plasma generating unit formed between the RF electrode and the bias electrode, wherein a plasma gas is supplied to the plasma generating unit, and a ground electrode installed under and spaced apart from the bias electrode, and including plasma through holes corresponding to the through holes of the bias electrode, wherein a pulsed DC bias of a second voltage level, which has a first voltage level periodically, is applied to the bias electrode.
Abstract:
Provided is a plasma diagnostic apparatus includes a probe unit, which is inserted into a plasma or disposed at boundary of a plasma, the apparatus includes: a signal supplying unit having a signal supplying source; a current detecting/voltage converting unit for applying a periodic voltage signal applied from the signal supplying unit to the probe unit, detecting the magnitude of the current flowing through the probe unit, and converting the detected current into a voltage; and a by-frequency measurement unit for computing the magnitude and phase of individual frequency components of the current flowing through the probe unit by receiving the voltage output from the current detecting/voltage converting unit as an input.
Abstract:
A substrate processing apparatus. The substrate processing apparatus includes a vacuum chamber having a reaction space to generate plasma in which a target substrate is located, a low frequency antenna unit located outside the reaction space to generate plasma in the reaction space, a low frequency power supply to apply low frequency power to the low frequency antenna unit, a high frequency antenna unit located outside the reaction space to generate plasma in the reaction space, and a high frequency power supply to apply high frequency power to the high frequency antenna unit. The apparatus allows the ignition of plasma to be performed efficiently via the high frequency antenna unit, and improves efficiency of inductive coupling between plasma and a low frequency antenna via the low frequency antenna unit, thereby improving plasma generation efficiency.
Abstract:
A transmitter for transmitting wireless power and a wireless power transmitting system having the same in the present invention includes at least one helical or spiral type coil in which one end thereof is in a grounded state and the other end is in the air, wherein the coil wirelessly transmits the power by resonance. The present invention has simpler structure and operates with low frequencies as compared with the existing wireless power transmitting scheme using magnetic resonance, thereby to enhance the efficiency of the power transfer, to reduce the cost for system building, and to easily implement a transmitting section with the multi-channel.
Abstract:
A transmitter for transmitting wireless power and a wireless power transmitting system having the same in the present invention includes at least one helical or spiral type coil in which one end thereof is in a grounded state and the other end is in the air, wherein the coil wirelessly transmits the power by resonance. The present invention has simpler structure and operates with low frequencies as compared with the existing wireless power transmitting scheme using magnetic resonance, thereby to enhance the efficiency of the power transfer, to reduce the cost for system building, and to easily implement a transmitting section with the multi-channel.
Abstract:
Provided are a process monitoring apparatus and method. The process monitoring apparatus includes a process chamber in which a process is performed, a probe assembly disposed on the process chamber, and comprising a probe electrode, a plasma generator generating plasma around the probe assembly, and a drive processor applying an alternating current (AC) voltage having at least 2 fundamental frequencies to the probe assembly, and extracting process monitoring parameters.
Abstract:
Provided is an apparatus for generating remote plasma, which can improve thin-film quality by preventing an arc at a bias electrode. The apparatus includes a radio frequency (RF) electrode installed inside an upper portion of a chamber, a bias electrode installed apart from the RF electrode, and including a plurality of through holes through which plasma passes, wherein a bias power is supplied to the bias electrode, a plasma generating unit formed between the RF electrode and the bias electrode, wherein a plasma gas is supplied to the plasma generating unit, and a ground electrode installed under and spaced apart from the bias electrode, and including plasma through holes corresponding to the through holes of the bias electrode, wherein a pulsed DC bias of a second voltage level, which has a first voltage level periodically, is applied to the bias electrode.
Abstract:
A substrate processing apparatus. The substrate processing apparatus includes a vacuum chamber having a reaction space to generate plasma in which a target substrate is located, a low frequency antenna unit located outside the reaction space to generate plasma in the reaction space, a low frequency power supply to apply low frequency power to the low frequency antenna unit, a high frequency antenna unit located outside the reaction space to generate plasma in the reaction space, and a high frequency power supply to apply high frequency power to the high frequency antenna unit. The apparatus allows the ignition of plasma to be performed efficiently via the high frequency antenna unit, and improves efficiency of inductive coupling between plasma and a low frequency antenna via the low frequency antenna unit, thereby improving plasma generation efficiency.
Abstract:
Provided is a plasma diagnostic apparatus having a probe unit, which is inserted into a plasma or disposed at boundary of a plasma, the apparatus including: a signal supplying unit having a signal supplying source; a current detecting/voltage converting unit for applying a periodic voltage signal applied from the signal supplying unit to the probe unit, detecting the magnitude of the current flowing through the probe unit, and converting the detected current into a voltage; and a by-frequency measurement unit for computing the magnitude and phase of individual frequency components of the current flowing through the probe unit by receiving the voltage output from the current detecting/voltage converting unit as an input.
Abstract:
Provided is an apparatus for generating remote plasma. The apparatus includes an RF antenna disposed in regard to a chamber, a plasma generating unit formed in an uppermost portion of the chamber, wherein a plurality of plasma generation gas introduction pipes are communicated with the plasma generating unit, a first shower head disposed below the plasma generating unit, and having a plurality of first plasma guide holes, a second shower head disposed below the first shower head, and having a plurality of source/purge gas guide holes and a plurality of second plasma guide holes directly connected to the respective first plasma guide holes, and a source/purge gas introduction unit disposed between the first and second shower heads, wherein a plurality of source/purge gas introduction pipes are uniformly communicated with the source/purge gas introduction unit.