公开(公告)号：US08741096B2

公开(公告)日：2014-06-03

申请号：US11770117

申请日：2007-06-28

申请人： Sang-Jun Park ,  Ho-Young Lee ,  Chun-Woo Lee

发明人： Sang-Jun Park ,  Ho-Young Lee ,  Chun-Woo Lee

IPC分类号： C23F1/08 ,  C23C16/00 ,  H01L21/677

CPC分类号： H01L21/67742 ,  H01L21/6719 ,  H01L21/67201

摘要： An apparatus for semiconductor processing capable of performing semiconductor processing such as etching, depositing, etc. on a surface of a substrate such as a wafer. The apparatus for semiconductor processing, comprises: a reaction chamber having a gate through which a substrate to be processed is transferred; one or more shower heads disposed at an upper side of the reaction chamber, for spraying gas so as to perform semiconductor processing; one or more wafer supporting units disposed at an inner lower side of the reaction chamber in correspondence to each of the shower heads, for supporting the substrate; a processing space forming unit disposed in the reaction chamber, for forming a processing space for semiconductor processing by sealing the shower heads and the wafer supporting units; and an exhausting system connected to the processing space forming unit for controlling a pressure and air exhaustion inside the reaction chamber and the processing space formed by the processing space forming unit.

摘要翻译： 一种用于半导体处理的装置，其能够在诸如晶片的基板的表面上执行诸如蚀刻，沉积等半导体处理。 用于半导体处理的装置包括：具有栅极的反应室，待处理的基板通过所述栅极传送; 一个或多个喷淋头，设置在反应室的上侧，用于喷射气体以进行半导体处理; 一个或多个晶片支撑单元，设置在与每个喷头相对应的反应室的内下侧，用于支撑基板; 处理空间形成单元，设置在所述反应室中，用于通过密封所述喷淋头和所述晶片支撑单元来形成用于半导体处理的处理空间; 以及连接到处理空间形成单元的排气系统，用于控制反应室内的压力和空气排出以及由处理空间形成单元形成的处理空间。