公开(公告)号：US20090087956A1

公开(公告)日：2009-04-02

申请号：US11862668

申请日：2007-09-27

申请人： Satyavolu Srinivas Papa Rao ,  Mona M. Eissa ,  Christopher Lyle Borst ,  Noel M. Russell ,  Stanley Monroe Smith

发明人： Satyavolu Srinivas Papa Rao ,  Mona M. Eissa ,  Christopher Lyle Borst ,  Noel M. Russell ,  Stanley Monroe Smith

IPC分类号： H01L21/8238 ,  H01L21/4763

CPC分类号： H01L21/7684 ,  H01L21/3212 ,  H01L23/522 ,  H01L2924/0002 ,  H01L2924/00

摘要： State of the art Integrated Circuits (ICs) encompass a variety of circuits, which have a wide variety of contact densities as measured in regions from 10 to 1000 microns in size. Fabrication processes for contacts have difficulty with high and low contact densities on the same IC, leading to a high incidence of electrical shorts and reduced operating speed of the circuits. This problem is expected to worsen as feature sizes shrink in future technology nodes. This invention is an electrically non-functional contact, known as a dummy contact, that is utilized to attain a more uniform distribution of contacts across an IC, which allows contact fabrication processes to produce ICs with fewer defects, and a method for forming said dummy contacts in ICs.

摘要翻译： 最先进的集成电路（IC）包括各种电路，其具有在10至1000微米尺寸的区域中测量的各种接触密度。 触点的制造过程在同一个IC上具有高和低接触密度的困难，导致电短路的高发生率和电路的降低的操作速度。 随着未来技术节点的特征尺寸缩小，这个问题预计会恶化。 本发明是被称为虚拟接触件的电非功能性接触件，其用于实现跨越IC的更均匀的接触分布，这允许接触制造工艺制造具有较少缺陷的IC，以及用于形成所述虚拟器件的方法 IC中的联系人

公开(公告)号：US20080220698A1

公开(公告)日：2008-09-11

申请号：US11683142

申请日：2007-03-07

申请人： Stanley Monroe Smith ,  Christopher Lyle Borst

发明人： Stanley Monroe Smith ,  Christopher Lyle Borst

IPC分类号： B24C1/00

CPC分类号： B24B37/04 ,  B24B57/02

摘要： An embodiment relates generally to a chemical mechanical polishing apparatus. The apparatus includes a platen adapted to receive a wafer to be chemical-mechanically polished and a polishing pad configured to polish the wafer. The apparatus also includes a slurry feed line configured to provide slurry to the polishing pad and at least one slurry dispensing outlet coupled to the slurry feed line and configured to dispense slurry as a mist of small droplets ranging from submicron to about 500 microns.

摘要翻译： 实施例一般涉及化学机械抛光装置。 该设备包括适于接收待化学机械抛光的晶片的台板和被配置为抛光晶片的抛光垫。 该设备还包括浆料供给管线，其被配置为向抛光垫提供浆料，以及至少一个浆料分配出口，其连接到浆料进料管线并且被配置为以小亚微米至约500微米的小液滴的雾分配浆料。

公开(公告)号：US07344987B2

公开(公告)日：2008-03-18

申请号：US11445669

申请日：2006-06-02

申请人： Yaojian Leng ,  Nilesh Shantaram Doke ,  Stanley Monroe Smith

发明人： Yaojian Leng ,  Nilesh Shantaram Doke ,  Stanley Monroe Smith

IPC分类号： H01L21/302

CPC分类号： H01L21/3212 ,  B24B37/013 ,  B24B37/042 ,  B24B49/16 ,  H01L22/26

摘要： The present invention relates to a method for performing chemical mechanical polishing. A high down-force step is performed. A low down-force step is performed. At least one of the down-force steps is modified, based on if one of the down-force steps exceeds an acceptable tolerance associated therewith. Other systems and methods are also disclosed.

摘要翻译： 本发明涉及一种进行化学机械抛光的方法。 执行高下推力步骤。 执行低下推力步骤。 基于下降力步骤之一超过与其相关联的可接受公差，至少一个下压步骤被修改。 还公开了其它系统和方法。