Method of growing GaN crystals from solution
    6.
    发明申请
    Method of growing GaN crystals from solution 审中-公开
    从溶液中生长GaN晶体的方法

    公开(公告)号:US20090223440A1

    公开(公告)日:2009-09-10

    申请号:US12073370

    申请日:2008-03-04

    IPC分类号: C30B19/00

    摘要: A process for making gallium nitride crystals comprising the steps of charging a reaction vessel with a layer of one selected from a Group IA element nitride, a Group IIA element nitride, and combinations thereof, adding a layer of gallium, applying nitrogen pressure to prevent dissociation or decomposition, forming in situ a gallium nitride source by heating the charged reaction vessel to render the one selected from the group reacted with the gallium, forming in situ a solvent comprising the gallium and the one selected from the group released by an exchange reaction between the gallium and the one selected from the group, providing a temperature when formed gallium nitride will be dissolved in the formed solvent and providing a temperature difference in the solvent between the formed gallium nitride source and the growing single crystal gallium nitride, and growing a single crystal gallium nitride.

    摘要翻译: 一种制造氮化镓晶体的方法,包括以下步骤:用选自IA族元素氮化物,IIA族元素氮化物及其组合的一层填充反应容器,加入镓层,施加氮气压力以防止解离 或分解,通过加热带电的反应容器使氮化镓源原位化,使选自组中的一个与镓反应,原位形成包含镓的溶剂和选自通过交换反应释放的溶剂的溶剂 当形成的氮化镓时提供温度的镓和选自该组的镓将被溶解在所形成的溶剂中并且在所形成的氮化镓源和生长的单晶氮化镓之间的溶剂中提供温度差,并且生长单个 晶体氮化镓。