公开(公告)号：US20200075150A1

公开(公告)日：2020-03-05

申请号：US16564767

申请日：2019-09-09

申请人： Scott Murray ,  Dan Nguyen ,  Janet McCallister ,  Tara Haines ,  Erica Williams ,  George Tucker ,  Heather Fuller ,  Randy Scott Fagin ,  Thomas Neal Payne ,  Sarah Dhane ,  James E. Hicks ,  Christopher Anthony ,  Chigger Bynum

发明人： Scott Murray ,  Dan Nguyen ,  Janet McCallister ,  Tara Haines ,  Erica Williams ,  George Tucker ,  Heather Fuller ,  Randy Scott Fagin ,  Thomas Neal Payne ,  Sarah Dhane ,  James E. Hicks ,  Christopher Anthony ,  Chigger Bynum

IPC分类号： G16H20/13 ,  G06F16/23 ,  G16H40/60 ,  G16H10/60 ,  G06F16/2455

摘要： In some examples, there may be provided systems, devices, and methods for using data from disparate sources to determine whether diversion events have occurred. A diversion event may be when a monitored unit intended for a target user is diverted away from the target user.

公开(公告)号：US06204560B1

公开(公告)日：2001-03-20

申请号：US09063173

申请日：1998-04-20

申请人： Andreas Daetwyler ,  Urs Deutsch ,  Christoph Harder ,  Wilhelm Heuberger ,  Eberhard Latta ,  Abram Jakubowicz ,  Albertus Oosenbrug ,  William Patrick ,  Peter Roentgen ,  Erica Williams

发明人： Andreas Daetwyler ,  Urs Deutsch ,  Christoph Harder ,  Wilhelm Heuberger ,  Eberhard Latta ,  Abram Jakubowicz ,  Albertus Oosenbrug ,  William Patrick ,  Peter Roentgen ,  Erica Williams

IPC分类号： H01L2352

CPC分类号： H01S5/0425 ,  H01L21/28575 ,  Y10S257/915

摘要： As will be described in more detail hereinafter, there is disclosed herein a titanium nitride diffusion barrier layer and associated method for use in non-silicon semiconductor technologies. In one aspect of the invention, a semiconductor device includes a non-silicon active surface. The improvement comprises an ohmic contact serving to form an external electrical connection to the non-silicon active surface in which the ohmic contact includes at least one layer consisting essentially of titanium nitride. In another aspect of the invention, a semiconductor ridge waveguide laser is disclosed which includes a semiconductor substrate and an active layer disposed on the substrate. A cladding layer is supported partially on the substrate and partially on the active layer. The cladding layer includes a ridge portion disposed in a confronting relationship with the active region. A metallization structure substantially covers the ridge portion and includes at least one layer consisting essentially of titanium nitride.

摘要翻译： 如下文将更详细地描述的，这里公开了用于非硅半导体技术的氮化钛扩散阻挡层和相关方法。 在本发明的一个方面中，半导体器件包括非硅有源表面。 该改进包括用于形成与非硅有源表面的外部电连接的欧姆接触，其中欧姆接触包括至少一层主要由氮化钛组成的层。 在本发明的另一方面，公开了一种半导体脊波导激光器，其包括半导体衬底和设置在衬底上的有源层。 包覆层部分地支撑在衬底上并且部分地支撑在有源层上。 包覆层包括以与活性区域相对的关系设置的脊部。 金属化结构基本上覆盖脊部并且包括至少一个由氮化钛组成的层。