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    Titanium nitride diffusion barrier for use in non-silicon technologies and method
    1.
    发明授权
    Titanium nitride diffusion barrier for use in non-silicon technologies and method 失效
    用于非硅技术和方法的氮化钛扩散阻挡层

    公开(公告)号：US06204560B1

    公开(公告)日：2001-03-20

    申请号：US09063173

    申请日：1998-04-20

    申请人： Andreas Daetwyler ,  Urs Deutsch ,  Christoph Harder ,  Wilhelm Heuberger ,  Eberhard Latta ,  Abram Jakubowicz ,  Albertus Oosenbrug ,  William Patrick ,  Peter Roentgen ,  Erica Williams

    发明人： Andreas Daetwyler ,  Urs Deutsch ,  Christoph Harder ,  Wilhelm Heuberger ,  Eberhard Latta ,  Abram Jakubowicz ,  Albertus Oosenbrug ,  William Patrick ,  Peter Roentgen ,  Erica Williams

    IPC分类号： H01L2352

    CPC分类号： H01S5/0425 ,  H01L21/28575 ,  Y10S257/915

    摘要： As will be described in more detail hereinafter, there is disclosed herein a titanium nitride diffusion barrier layer and associated method for use in non-silicon semiconductor technologies. In one aspect of the invention, a semiconductor device includes a non-silicon active surface. The improvement comprises an ohmic contact serving to form an external electrical connection to the non-silicon active surface in which the ohmic contact includes at least one layer consisting essentially of titanium nitride. In another aspect of the invention, a semiconductor ridge waveguide laser is disclosed which includes a semiconductor substrate and an active layer disposed on the substrate. A cladding layer is supported partially on the substrate and partially on the active layer. The cladding layer includes a ridge portion disposed in a confronting relationship with the active region. A metallization structure substantially covers the ridge portion and includes at least one layer consisting essentially of titanium nitride.

    摘要翻译： 如下文将更详细地描述的，这里公开了用于非硅半导体技术的氮化钛扩散阻挡层和相关方法。 在本发明的一个方面中，半导体器件包括非硅有源表面。 该改进包括用于形成与非硅有源表面的外部电连接的欧姆接触，其中欧姆接触包括至少一层主要由氮化钛组成的层。 在本发明的另一方面，公开了一种半导体脊波导激光器，其包括半导体衬底和设置在衬底上的有源层。 包覆层部分地支撑在衬底上并且部分地支撑在有源层上。 包覆层包括以与活性区域相对的关系设置的脊部。 金属化结构基本上覆盖脊部并且包括至少一个由氮化钛组成的层。

    Semiconductor lasers and method for making the same
    2.
    发明授权
    Semiconductor lasers and method for making the same 失效
    半导体激光器及其制造方法

    公开(公告)号：US5940424A

    公开(公告)日：1999-08-17

    申请号：US721072

    申请日：1996-09-26

    申请人： Hans Peter Dietrich ,  Marcel Gasser ,  Abram Jakubowicz ,  Ernst-Eberhard Latta ,  Peter Roentgen

    发明人： Hans Peter Dietrich ,  Marcel Gasser ,  Abram Jakubowicz ,  Ernst-Eberhard Latta ,  Peter Roentgen

    IPC分类号： H01S5/00 ,  H01S5/028 ,  H01S3/19

    CPC分类号： H01S5/028

    摘要： A semiconductor laser diode, and a method for producing the semiconductor laser diode, includes a waveguide being terminated by a back facet and a front facet and a front facet coating and a back facet coating having a reflectivity providing for controlled decoupling of light at the front facet from the standing lightwave in the waveguide. The front facet coating includes a stack of layers providing for a phase shift of the standing lightwave within the waveguide such that the intensity of the lightwave at the front facet, where the light is decoupled from the standing lightwave, has a relative minimum.

    摘要翻译： 半导体激光二极管和半导体激光二极管的制造方法包括：由后面和前端面端接的波导管和前端面涂层以及具有反射率的背面涂层，该反射率提供用于控制前端的光的去耦 波导中的立体光波的小平面。 前面小面涂层包括一叠层，用于使立体光波在波导内相移，使得光从光源与光源分离的光波的强度具有相对最小值。

    WAFER-LEVEL FABRICATION OF OPTICAL DEVICES WITH FRONT FOCAL LENGTH CORRECTION
    6.
    发明申请
    WAFER-LEVEL FABRICATION OF OPTICAL DEVICES WITH FRONT FOCAL LENGTH CORRECTION 审中-公开
    具有正面长度校正的光学器件的水平制造

    公开(公告)号：US20140299587A1

    公开(公告)日：2014-10-09

    申请号：US14239362

    申请日：2012-08-24

    申请人： Hartmut Rudmann ,  Matthias Maluck ,  Alexander Bietsch ,  Peter Roentgen ,  Stephan Heimgartner

    发明人： Hartmut Rudmann ,  Matthias Maluck ,  Alexander Bietsch ,  Peter Roentgen ,  Stephan Heimgartner

    IPC分类号： G02B13/00 ,  B23K26/36

    CPC分类号： G02B13/0085 ,  B23K26/361 ,  G01J1/42 ,  H01L27/14618 ,  H01L27/14625 ,  H01L27/14683 ,  H01L2924/0002 ,  Y10T29/49748 ,  Y10T83/04 ,  H01L2924/00

    摘要： The wafer stack (100) comprises a first wafer (OW1) referred to as optics wafer and a second wafer (SW) referred to as spacer wafer, said optics wafer (OW1) having manufacturing irregularities. The spacer wafer (SW) is structured such that it at least partially compensates for said manufacturing irregularities. The corresponding method for manufacturing a device, which in particular can be an optical device, comprises carrying out a correction step for at least partially compensating for manufacturing irregularities. Such a correction step comprises providing a wafer (SW) referred to as spacer wafer, wherein that spacer wafer is structured for at least partially compensating for said manufacturing irregularities. Those manufacturing irregularities may comprise a deviation from a nominal value, e.g., a irregularities in focal length. The invention can allow to mass produce high-precision devices at a high yield.

    摘要翻译： 晶片堆叠（100）包括称为光学晶片的第一晶片（OW1）和被称为间隔晶片的第二晶圆（SW），所述光学晶片（OW1）具有制造不规则性。 间隔晶片（SW）被构造成使得其至少部分地补偿所述制造不规则。 用于制造装置的相应方法，其特别地可以是光学装置，包括执行至少部分地补偿制造不规则性的校正步骤。 这种校正步骤包括提供称为间隔晶片的晶片（SW），其中该间隔晶片被构造成用于至少部分补偿所述制造不规则。 这些制造不规则可能包括与标称值的偏差，例如焦距不规则。 本发明可以大批量生产高精度的装置。

    Modulated strain heterostructure light emitting device
    8.
    发明授权
    Modulated strain heterostructure light emitting device 失效
    调制应变异质结构发光器件

    公开(公告)号：US5373166A

    公开(公告)日：1994-12-13

    申请号：US125724

    申请日：1993-09-24

    申请人： Nicholas I. Buchan ,  Willi Heuberger ,  Peter Roentgen

    发明人： Nicholas I. Buchan ,  Willi Heuberger ,  Peter Roentgen

    IPC分类号： H01L33/00 ,  H01S5/00 ,  H01S5/32 ,  H01S5/323 ,  H01S5/34 ,  H01L29/161 ,  H01L29/205 ,  H01L29/225

    CPC分类号： B82Y20/00 ,  H01S5/32 ,  H01S5/3201 ,  H01S5/32391 ,  H01S5/3406

    摘要： A heterostructure laser diode is provided with an active region that includes a ternary or quaternary semiconductor compound. The composition of the semiconductor compound forming the active region is modulated resulting in an active region with a modulated strain profile (.increment.a/a), e.g., a triangular sawtooth-like strain profile, perpendicular to the laser diodes epitaxial layers, i.e., parallel to the z-axis. This permits the present invention to increase strain and avoid formation of misfit dislocations by compensation, i.e., by inserting strained layers having opposing strains.

    摘要翻译： 异质结激光二极管设置有包括三元或四元半导体化合物的有源区。 调制形成有源区的半导体化合物的组成，产生具有调制的应变分布（INCREMENT a / a）的有源区，例如垂直于激光二极管外延层的三角形锯齿状应变分布，即平行 到z轴。 这允许本发明增加应变并避免通过补偿形成失配位错，即通过插入具有相反应变的应变层。

    WAFER-LEVEL FABRICATION OF OPTICAL DEVICES, IN PARTICULAR OF MODULES FOR COMPUTATIONAL CAMERAS
    9.
    发明申请
    WAFER-LEVEL FABRICATION OF OPTICAL DEVICES, IN PARTICULAR OF MODULES FOR COMPUTATIONAL CAMERAS 审中-公开
    光学装置的水平制造，特别是用于计算机的模块

    公开(公告)号：US20140307081A1

    公开(公告)日：2014-10-16

    申请号：US14239334

    申请日：2012-08-24

    申请人： Hartmut Rudmann ,  Matthias Maluck ,  Alexander Bietsch ,  Peter Roentgen ,  Stephan Heimgartner

    发明人： Hartmut Rudmann ,  Matthias Maluck ,  Alexander Bietsch ,  Peter Roentgen ,  Stephan Heimgartner

    IPC分类号： G02B13/00 ,  G01J1/42

    CPC分类号： G02B13/0085 ,  B23K26/361 ,  G01J1/42 ,  H01L27/14618 ,  H01L27/14625 ,  H01L27/14683 ,  H01L2924/0002 ,  Y10T29/49748 ,  Y10T83/04 ,  H01L2924/00

    摘要： The device (50) comprises an optics member (60) and a spacer member (70), said optics member comprising N≧2 sets of passive optical components (65) comprising one or more passive optical components each. The spacer member (70) comprises N light channels (77), each of said N light channels being associated with one of said N sets of passive optical components. All of said N light channels (77) have an at least substantially identical geometrical length (g), and an optical path length of a first of said N light channels is different from an optical path length of at least one second of said N light channels. Methods for manufacturing such devices are described, too. The invention can allow to mass produce high-precision devices (50) at a high yield.

    摘要翻译： 所述装置（50）包括光学构件（60）和间隔构件（70），所述光学构件包括N≥2组无源光学组件（65），每个无源光学组件包括一个或多个无源光学组件。 间隔构件（70）包括N个光通道（77），所述N个光通道中的每一个与所述N组无源光学部件中的一个相关联。 所有所述N个光通道（77）具有至少基本上相同的几何长度（g），并且所述N个光通道中的第一个的光路长度不同于所述N个光的至少一秒的光路长度 频道 还描述了制造这种装置的方法。 本发明可以以高产率批量生产高精度装置（50）。

    METHOD OF MANUFACTURING A PLURALITY OF OPTICAL DEVICES FOR CAMERAS
    10.
    发明申请
    METHOD OF MANUFACTURING A PLURALITY OF OPTICAL DEVICES FOR CAMERAS 有权
    制造摄像机多光学设备的方法

    公开(公告)号：US20130242182A1

    公开(公告)日：2013-09-19

    申请号：US13817202

    申请日：2011-08-12

    申请人： Hartmut Rudmann ,  Peter Roentgen ,  Matthias Maluck ,  Markus Rossi

    发明人： Hartmut Rudmann ,  Peter Roentgen ,  Matthias Maluck ,  Markus Rossi

    IPC分类号： H04N5/225

    CPC分类号： H04N5/2254 ,  G02B7/003 ,  G02B7/021 ,  G02B13/006 ,  G02B13/0085 ,  H01L27/14618 ,  H01L27/14625 ,  H01L27/14685 ,  H01L27/14687 ,  H01L2924/0002 ,  H04N5/2257 ,  Y10T29/49002 ,  Y10T29/49826 ,  H01L2924/00

    摘要： Manufacturing optical devices (e.g., for cameras) includes providing and allocating mount elements to lens modules wherein the mount elements are to be arranged within the optical devices to define a fixed separation distance between the lens modules and the image sensor plane. The mount elements have variable mount FFL sections by means of which the geometrical distance between the lens module and the image sensor plane is adjusted for each lens module, individually or in groups dependent on the optical properties of the lens modules, to compensate the variation of the lens module values among the lens modules, so that the focal planes of the lens modules falls into the image sensor plane.

    摘要翻译： 制造光学装置（例如，用于照相机）包括提供和分配安装元件到透镜模块，其中安装元件将被布置在光学装置内以限定透镜模块和图像传感器平面之间的固定间隔距离。 安装元件具有可变的安装FFL部分，通过该部分，透镜模块和图像传感器平面之间的几何距离针对每个透镜模块单独地或以取决于透镜模块的光学特性的组进行调整，以补偿 透镜模块在透镜模块之间进行值测量，使得透镜模块的焦平面落入图像传感器平面。