公开(公告)号：US06204560B1

公开(公告)日：2001-03-20

申请号：US09063173

申请日：1998-04-20

申请人： Andreas Daetwyler ,  Urs Deutsch ,  Christoph Harder ,  Wilhelm Heuberger ,  Eberhard Latta ,  Abram Jakubowicz ,  Albertus Oosenbrug ,  William Patrick ,  Peter Roentgen ,  Erica Williams

发明人： Andreas Daetwyler ,  Urs Deutsch ,  Christoph Harder ,  Wilhelm Heuberger ,  Eberhard Latta ,  Abram Jakubowicz ,  Albertus Oosenbrug ,  William Patrick ,  Peter Roentgen ,  Erica Williams

IPC分类号： H01L2352

CPC分类号： H01S5/0425 ,  H01L21/28575 ,  Y10S257/915

摘要： As will be described in more detail hereinafter, there is disclosed herein a titanium nitride diffusion barrier layer and associated method for use in non-silicon semiconductor technologies. In one aspect of the invention, a semiconductor device includes a non-silicon active surface. The improvement comprises an ohmic contact serving to form an external electrical connection to the non-silicon active surface in which the ohmic contact includes at least one layer consisting essentially of titanium nitride. In another aspect of the invention, a semiconductor ridge waveguide laser is disclosed which includes a semiconductor substrate and an active layer disposed on the substrate. A cladding layer is supported partially on the substrate and partially on the active layer. The cladding layer includes a ridge portion disposed in a confronting relationship with the active region. A metallization structure substantially covers the ridge portion and includes at least one layer consisting essentially of titanium nitride.

摘要翻译： 如下文将更详细地描述的，这里公开了用于非硅半导体技术的氮化钛扩散阻挡层和相关方法。 在本发明的一个方面中，半导体器件包括非硅有源表面。 该改进包括用于形成与非硅有源表面的外部电连接的欧姆接触，其中欧姆接触包括至少一层主要由氮化钛组成的层。 在本发明的另一方面，公开了一种半导体脊波导激光器，其包括半导体衬底和设置在衬底上的有源层。 包覆层部分地支撑在衬底上并且部分地支撑在有源层上。 包覆层包括以与活性区域相对的关系设置的脊部。 金属化结构基本上覆盖脊部并且包括至少一个由氮化钛组成的层。

公开(公告)号：US4458409A

公开(公告)日：1984-07-10

申请号：US459290

申请日：1983-01-20

申请人： Eberhard Latta ,  Marcel Gasser

发明人： Eberhard Latta ,  Marcel Gasser

IPC分类号： H01L39/24 ,  H01L

CPC分类号： H01L39/2493 ,  Y10S505/922 ,  Y10T29/49014

摘要： A process for reducing the particle current in the sub-gap range of all-Nb Josephson junctions. The process results in junctions having substantially increased values of V.sub.m. In order to reduce the single particle current, the reaction between the barrier layer oxide and the counter electrode is prevented by additional process steps. After forming the tunnel barrier (4) and before depositing the counter electrode (9), the tunnel barrier surface is covered with a thin, non-continuous layer (5) of a material such as gold which is not reacting with oxygen at process conditions. Subsequently, the non-covered barrier layer surface regions (7) are strongly oxidized thereby forming an oxide layer (8) of sufficient thickness to prevent electron tunneling in these regions.

摘要翻译： 一种降低全铌约瑟夫逊结的子间隙范围内的粒子电流的方法。 该过程导致具有显着增加的Vm值的结。 为了减少单个颗粒电流，通过附加的工艺步骤来防止阻挡层氧化物和对电极之间的反应。 在形成隧道势垒（4）之后并且在沉积相对电极（9）之前，隧道势垒表面被薄的非连续层（5）覆盖，所述材料例如金在工艺条件下不与氧反应 。 随后，非覆盖的阻挡层表面区域（7）被强氧化，从而形成足够厚度的氧化物层（8），以防止这些区域中的电子隧穿。